Method of forming metal pattern and method of manufacturing display substrate having the same

1. A method of forming a metal pattern, the method comprising:

forming a precursor layer including a metal precursor, on a substrate;

irradiating a light on the precursor layer to form a metal seed layer comprising a plurality of discrete patterns arranged in a predetermined pattern on the substrate, comprising:

a light source irradiating the light in the predetermined pattern on the precursor layer to expose and reduce the precursor layer; and

the same light source annealing the reduced precursor layer by the light; and

electroless-plating the metal seed layer discrete patterns to form a metal pattern layer comprising a plurality of discrete patterns each formed from a group of the metal seed layer discrete patterns.

2. The method of claim 1 , wherein the forming a precursor layer comprises:

applying the metal precursor on the substrate;

rotating the substrate to uniformly spread the metal precursor on the substrate; and

drying the substrate.

3. The method of claim 1 , wherein the forming a precursor layer comprises:

uniformly distributing the metal precursor on the substrate using a uniform droplet diffuser.

4. The method of claim 1 , wherein the metal seed layer includes a first metal, and the metal pattern layer includes a second metal, a reducing power of the first metal is smaller than a reducing power of the second metal.

5. The method of claim 4 , wherein the first metal includes at least one selected from copper (Cu), silver (Ag), titanium (Ti), gold (Au) and palladium (Pd).

6. The method of claim 4 , wherein the electroless-plating the metal seed layer comprises exposing the substrate to a plating solution including a soluble oxidizer including the second metal.

7. The method of claim 6 , wherein the first metal includes copper (Cu), and the second metal includes silver (Ag).

8. The method of claim 1 , further comprising washing the precursor layer after the irradiating a light on the precursor layer.

9. The method of claim 1 , wherein the irradiating a light on the precursor layer to form a metal seed layer further comprises irradiating the light from a light source disposed above and through a mask having a predetermined pattern, so that the precursor layer is exposed and annealed.

10. The method of claim 1 , wherein the irradiating a light on the precursor layer to form a metal seed layer further comprises condensing the light by a condenser in a predetermined pattern, so that the precursor layer is exposed and annealed.

11. The method of claim 1 , wherein a wavelength of the light has a bandwidth between about 180 nanometers and about 1000 nanometers.

12. The method of claim 11 , wherein the light has

the wavelength between about 180 nanometers and about 400 nanometers during the exposing the precursor layer, and

the wavelength between about 400 nanometers and about 1000 nanometers during the annealing the precursor layer.

13. The method of claim 11 , wherein the light is generated from a Xenon (Xe) lamp.

14. The method of claim 9 , wherein the irradiating a light on the precursor layer to form a metal seed layer further comprises condensing and refining the light by a lens disposed under the mask.

15. The method of claim 14 , wherein a plurality of lenses are disposed under the mask corresponding to the pattern of the mask.

16. The method of claim 1 , further comprising electro-plating the metal pattern layer on the substrate after the electro-less plating.

17. A method of manufacturing a display substrate, the method comprising:

forming a gate pattern including gate lines and a gate electrode, the forming a gate pattern comprising:

forming a precursor layer including a metal precursor, on a substrate,

irradiating a light on the precursor layer to form a metal seed layer comprising a plurality of discrete patterns arranged in a predetermined pattern on the substrate, comprising

a light source irradiating the light in the predetermined pattern on the precursor layer to expose and reduce the precursor layer; and

the same light source annealing the reduced precursor layer by the light, and

electroless-plating the metal seed layer discrete patterns to form a metal pattern layer comprising a plurality of discrete patterns each formed from a group of the metal seed layer discrete patterns;

forming a source pattern on the substrate including the gate pattern, the source pattern including date lines, a source electrode and a drain electrode; and

forming a pixel electrode on the substrate including the source pattern, the pixel electrode in electrical connection with the drain electrode.

18. The method of claim 17 , wherein

a wavelength of the light has a bandwidth between about 180 nanometers and about 1000 nanometers,

the light has the wavelength between about 180 nanometers and about 400 nanometers during the exposing the precursor layer, and

the light has the wavelength between about 400 nanometers and about 1000 nanometers during the annealing the precursor layer.