IP Library Granted Patent US 9,153,772
Granted Patent B2
US 9,153,772 · App. 13/407,581 · Granted Oct 6, 2015

Device for increasing the magnetic flux density

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Quick Facts
Patent No.
US 9,153,772
App. No.
13/407,581
Granted
Oct 6, 2015
Kind
B2
Abstract

A device for increasing the magnetic flux density includes a semiconductor body and a first magnetic sensor integrated into the semiconductor body, whereby a housing section, which forms a cavity, is arranged above the sensor on the semiconductor surface and the cavity is filled with a ferromagnetic material and the material comprises a liquid.

Claims (32)

1. A device for increasing a magnetic flux density, the device comprising:

a semiconductor body;

a first magnetic sensor integrated into the semiconductor body; and

a housing section arranged above the first magnetic sensor on a semiconductor surface of the semiconductor body, the housing section forming a cavity that is surrounded on all sides and filled completely with a ferromagnetic material, the ferromagnetic material comprising a liquid,

wherein the housing section is arranged completely on and above the semiconductor surface, and wherein a floor of the cavity is formed by the semiconductor surface.

2. A device for increasing a magnetic flux density, the device comprising:

a semiconductor body;

a first magnetic sensor integrated into the semiconductor body; and

a housing section arranged above the first magnetic sensor on a semiconductor surface of the semiconductor body, the housing section forming a cavity that is surrounded on all sides and filled completely with a ferromagnetic material,

wherein the material comprises a ferromagnetic sphere.

3. The device according to claim 1 , wherein the housing section is made of a plastic.

4. The device according to claim 1 , wherein the semiconductor surface of the semiconductor body forms a bottom of the housing section.

5. The device according to claim 1 , wherein the housing section has a substantially cylindrical form.

6. The device according to claim 1 , wherein the housing section is formed at least partially of a lacquer used in a semiconductor masking process.

7. The device according to claim 1 , wherein the first magnetic sensor is formed as a Hall sensor.

8. The device according to claim 1 , wherein the first magnetic sensor is formed substantially in a center of the housing section.

9. The device according to claim 1 , wherein, for a differential detection of the magnetic flux, a plurality of sensors arranged in pairs is formed below the cavity.

10. The device according to claim 1 , wherein, for a differential detection of the magnetic flux, a plurality of sensors, whose surface forms a normal vector orthogonal to one another, is provided below the cavity.

11. The device according to claim 1 , wherein an electronic circuit, which evaluates the signals of the magnetic sensor, is integrated into the semiconductor body.

12. The device according to claim 1 , wherein the cavity is entirely sealed by the housing.

13. A device for increasing a magnetic flux density, the device comprising:

a semiconductor body;

a first magnetic sensor integrated into the semiconductor body; and

a housing section arranged above the first magnetic sensor on a semiconductor surface of the semiconductor body, the housing section forming a cavity that is surrounded on all sides and filled completely with a ferromagnetic material, the ferromagnetic material comprising a liquid and a ferromagnetic sphere disposed within the liquid.

14. A device for increasing a magnetic flux density, the device comprising:

a semiconductor body;

a first magnetic sensor integrated into the semiconductor body; and

a housing section arranged above the first magnetic sensor on a semiconductor surface of the semiconductor body, the housing section forming a cavity that is surrounded on all sides and filled completely with a ferromagnetic material, the ferromagnetic material comprising a liquid and a single ferromagnetic sphere disposed within the liquid.

15. The device according to claim 1 , wherein the ferromagnetic material comprises a single ferromagnetic sphere disposed within the ferromagnetic liquid.

16. The device according to claim 1 , wherein the housing comprises a cover disposed over the housing.

17. The device according to claim 1 , wherein the cavity is disposed directly above the first magnetic sensor.

18. The device according to claim 1 , wherein the ferromagnetic material is disposed entirely above the first magnetic sensor.

Assignments (2)
CHANGE OF NAME Recorded Mar 7, 2017
From: MICRONAS GMBH
To: TDK-MICRONAS GMBH
Reel/Frame 041901/0191 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 26, 2012
From: FRANKE, JOERG
To: MICRONAS GMBH
Reel/Frame 028647/0186 →