Method of manufacturing a semiconductor device

1. A method of manufacturing a semiconductor device, comprising:

forming a barrier metal film and an aluminum metal film on an insulating film on a semiconductor substrate;

forming two aluminum electrodes in parallel with each other by patterning the barrier metal film and the aluminum metal film;

selectively removing the aluminum metal film in a region of part of each of the two aluminum electrodes to form two single-layer barrier metal electrodes separated from each other; and

forming a resistor between the two single-layer barrier metal electrodes so as to electrically connect the two single-layer barrier metal electrodes to each other.

2. A method of manufacturing a semiconductor device according to claim 1 , wherein the forming the resistor comprises:

forming, with a resist, a resist opening region between the two barrier metal electrodes separated from each other;

carrying out sputter etching of the two barrier metal electrodes;

depositing a thin film for forming the resistor; and

lifting-off the thin film in a region other than the resist opening region to form the resistor.

3. A method of manufacturing a semiconductor device according to claim 2 , wherein a thickness of the resist is set to five to 100 times as large as a thickness of the thin film forming the resistor.

4. A method of manufacturing a semiconductor device according to claim 1 , wherein the selectively removing the aluminum metal film comprises carrying out wet etching using phosphoric acid.

5. A method of manufacturing a semiconductor device according to claim 1 , wherein the barrier metal film is formed of any one of Ti, a stacked film of Ti and TiN, and TiW.

6. A method of manufacturing a semiconductor device according to claim 1 , wherein the resistor is formed of any one of Poly-Si, a-Si, SiCr, and SiCrN.

7. A method of manufacturing a semiconductor device according to claim 1 , wherein the selectively removing the aluminum metal film comprises etching the aluminum metal film from a tip region of each of the two aluminum electrodes to expose the two barrier metal electrodes.

8. A method of manufacturing a semiconductor device according to claim 1 , wherein the selectively removing the aluminum metal film comprises selectively removing the aluminum metal film from a tip region of each of the two aluminum electrodes without removing the barrier metal film.

9. A method of manufacturing a semiconductor device according to claim 1 , wherein the resistor is formed of any one of Poly-Si, a-Si, SiCr, and SiCrN.

10. A method of manufacturing a semiconductor device, comprising:

forming an insulating film on a semiconductor substrate;

forming a first film of a barrier metal on the insulating film;

forming on the first film a second film of an aluminum metal;

forming a resist pattern on the second film, continuously etching the first and second films, and removing the resist pattern to form two aluminum electrodes each made of the first and second metal films;

selectively removing the first film from a tip region of each of the two aluminum electrodes to form two barrier metal electrodes each made only of the barrier metal; and

forming a resistor that electrically connects the two barrier metal electrodes.

11. A method of manufacturing a semiconductor device according to claim 10 , wherein the forming the resistor comprises:

forming, with a resist, a resist opening region between the two barrier metal electrodes;

carrying out sputter etching of the two barrier metal electrodes;

depositing a thin film for forming the resistor; and

lifting-off the thin film in a region other than the resist opening region to form the resistor.

12. A method of manufacturing a semiconductor device according to claim 11 , wherein a thickness of the resist is set to five to 100 times as large as a thickness of the thin film forming the resistor.

13. A method of manufacturing a semiconductor device according to claim 10 , wherein the selectively removing the first film comprises carrying out wet etching using phosphoric acid so that the first film is selectively removed without etching the barrier metal.

14. A method of manufacturing a semiconductor device according to claim 10 , wherein the first film is formed of any one of Ti, a stacked film of Ti and TiN, and TiW.

15. A method of manufacturing a semiconductor device according to claim 10 , wherein the resistor is formed of any one of Poly-Si, a-Si, SiCr, and SiCrN.

16. A method of manufacturing a semiconductor device according to claim 10 , wherein the two barrier metal electrodes are formed in parallel, space-apart relation to one another.

17. A method of manufacturing a semiconductor device, comprising:

forming an insulating film on a semiconductor substrate;

forming a barrier metal film on the insulating film;

forming an aluminum metal film on the barrier metal film;

etching the barrier metal film and the aluminum metal film to form two aluminum electrodes;

forming a resist pattern that covers the two aluminum electrodes except for preselected regions of the two aluminum electrodes;

selectively removing the aluminum metal film from the preselected regions of the two aluminum electrodes and removing the resist pattern so that the preselected regions of the two aluminum electrodes serve as single-layer barrier metal electrodes; and

forming a resistor over the insulating film so as to electrically connect the single-layer barrier metal electrodes to one another.

18. A method of manufacturing a semiconductor device according to claim 17 , wherein the preselected regions correspond to tip regions of the aluminum electrodes.

19. A method of manufacturing a semiconductor device according to claim 17 , wherein the preselected regions correspond to middle regions of the aluminum electrodes.

20. A method of manufacturing a semiconductor device according to claim 17 , wherein the barrier metal film is formed of any one of Ti, a stacked film of Ti and TiN, and TiW.