Manufacturing method for image sensor IC

1. A manufacturing method for an image sensor integrated circuit, comprising:

arranging on a silicon substrate a plurality of pixel regions each having a photodiode;

forming a light-transmissive conductive film over the silicon substrate; and

forming a protective film on the light-transmissive conductive film while electrically connecting the light-transmissive conductive film to hold the same potential as that of the silicon substrate.

2. A manufacturing method according to claim 1 ; wherein the light-transmissive conductive film comprises a polycrystalline silicon thin film.

3. A manufacturing method according to claim 2 ; wherein a thickness of the polycrystalline silicon thin film is 1,000 Å or smaller.

4. A manufacturing method according to claim 2 ; wherein a thickness of the polycrystalline silicon thin film is 500 Å or smaller.

5. A manufacturing method according to claim 1 ; wherein the light-transmissive conductive film comprises an indium tin oxide (ITO) thin film.

6. A manufacturing method according to claim 1 ; wherein the light-transmissive conductive film is formed so as to be disposed over and completely cover the photodiode of each of the plurality of pixel regions.

7. A manufacturing method according to claim 1 ; wherein the light-transmissive conductive film is formed with at least one opening that prevents blocking of incident light to the plurality of pixel regions.

8. A manufacturing method according to claim 1 ; wherein the light-transmissive conductive film is formed so as to be shaped with a plurality of straight lines forming at least one opening that prevents blocking of incident light to the plurality of pixel regions.

9. A manufacturing method for an image sensor integrated circuit, comprising:

forming a light-transmissive conductive film over a silicon substrate;

arranging on the silicon substrate plurality of pixel regions so as to underlie the light-transmissive conductive film, each of the plurality of pixel regions having a photodiode; and

forming a protective film on the light-transmissive conductive film and on the underlying pixel regions while electrically connecting the light-transmissive conductive film to hold the same potential as that of the silicon substrate and while maintaining a potential of each underlying pixel region substantially constant over the entire underlying pixel regions to form the protective film with substantially uniform thickness and quality.

10. A manufacturing method according to claim 9 ; wherein the light-transmissive conductive film comprises a polycrystalline silicon thin film.

11. A manufacturing method according to claim 10 ; wherein a thickness of the polycrystalline silicon thin film is 1,000 Å or smaller.

12. A manufacturing method according to claim 10 ; wherein a thickness of the polycrystalline silicon thin film is 500 Å or smaller.

13. A manufacturing method according to claim 9 ; wherein the light-transmissive conductive film comprises an indium tin oxide (ITO) thin film.

14. A manufacturing method according to claim 9 ; wherein the plurality of pixel regions are arranged so that the light-transmissive conductive film completely covers the photodiode of each of the plurality of pixel regions.

15. A manufacturing method according to claim 9 ; wherein the light-transmissive conductive film is formed with at least one opening that prevents blocking of incident light to the plurality of pixel regions.

16. A manufacturing method according to claim 9 ; wherein the light-transmissive conductive film is formed so as to be shaped with a plurality of straight lines forming at least one opening that prevents blocking of incident light to the plurality of pixel regions.

17. A manufacturing method for an image sensor integrated circuit, comprising:

arranging on a silicon substrate a plurality of pixel regions each having a photodiode;

forming over the silicon substrate a light-transmissive conductive film having a plurality of openings for preventing blocking of incident light to the plurality of pixel regions; and

forming a protective film on the light-transmissive conductive film while electrically connecting the light-transmissive conductive film to hold the same potential as that of the silicon substrate.

18. A manufacturing method according to claim 17 ;

wherein the light-transmissive conductive film has having a transmittance of less than 100%.

19. A manufacturing method according to claim 17 ; wherein the light-transmissive conductive film comprises a polycrystalline silicon thin film.

20. A manufacturing method according to claim 17 ; wherein the light-transmissive conductive film comprises an indium tin oxide (ITO) thin film.