Method and apparatus for backside illumination sensor
Methods and apparatus for a backside illuminated (BSI) image sensor device are disclosed. A BSI sensor device is formed on a substrate comprising a photosensitive diode. The substrate may be thinned at the backside, then a B doped Epi-Si(Ge) layer may be formed on the backside surface of the substrate. Additional layers may be formed on the B doped Epi-Si(Ge) layer, such as a metal shield layer, a dielectric layer, a micro-lens, and a color filter.
1. A backside illuminated (BSI) sensor device, comprising:
a substrate with a front side and a backside;
a photosensitive diode within the substrate, the photosensitive diode being positioned along the front side of the substrate; and
a B doped Epi-Si(Ge) layer on a surface of the backside of the substrate, wherein the B doped Epi-Si(Ge) layer comprises silicon and germanium.
2. The BSI sensor device of claim 1 , wherein the B doped Epi-Si(Ge) layer is of thickness in a range about 100 to 700 Å.
3. The BSI sensor device of claim 1 , further comprising an isolation area within the substrate.
4. The BSI sensor device of claim 1 , wherein the photosensitive diode is a pinned layer photodiode comprising a p-n-p junction.
5. The BSI sensor device of claim 1 , further comprising a metal shield layer on the B doped Epi-Si(Ge) layer.
6. The BSI sensor device of claim 1 , further comprising a dielectric layer on the B doped Epi-Si(Ge) layer.
7. The BSI sensor device of claim 1 , further comprising a micro-lens on the B doped Epi-Si(Ge) layer.
8. The BSI sensor device of claim 1 , further comprising a color filter on the B doped Epi-Si(Ge) layer.
9. The BSI sensor device of claim 1 , further comprising a transistor on a surface of the front side of the substrate.
10. The BSI sensor device of claim 1 , further comprising a passivation layer on a surface of the front side of the substrate.
11. The BSI sensor device of claim 1 , further comprising an inter-layer dielectric (ILD) layer on a surface of the front side of the substrate.
12. A backside illuminated (BSI) sensor device, comprising:
a pixel array in a substrate, wherein the substrate has a front side and a backside, and wherein the substrate comprises a plurality of photosensitive diodes of the pixel array, the photosensitive diodes being positioned in the front side of the substrate;
a B doped Epi-Si(Ge) layer on a surface of the backside of the substrate, wherein the B doped Epi-Si(Ge) layer comprises silicon and germanium;
a metal shield layer on the B doped Epi-Si(Ge) layer;
a dielectric layer on the metal shield layer;
a micro-lens layer on the B doped Epi-Si(Ge) layer; and
a color filter on the micro-lens layer.
13. The BSI sensor device of claim 12 , further comprising an isolation area within the substrate.
14. The BSI sensor device of claim 12 , wherein a photosensitive diode of the plurality of photosensitive diodes of the pixel array is a pinned layer photodiode comprising a p-n-p junction.
15. The BSI sensor device of claim 12 , wherein the B doped Epi-Si(Ge) layer is of thickness in a range about 100 to 700 Å.
16. The BSI sensor device of claim 12 , further comprising a transistor on a surface of the front side of the substrate.
17. The BSI sensor device of claim 16 , further comprising a passivation layer on the front side of the substrate.
18. A backside illuminated (BSI) sensor device, comprising:
a pixel array in a front side of a substrate, wherein the substrate comprises a plurality of photosensitive diodes of the pixel array, a photosensitive diode of the plurality of photosensitive diodes of the pixel array is a pinned layer photodiode comprising a p-n-p junction;
a B doped Epi-Si(Ge) layer on a surface of a backside of the substrate, wherein the B doped Epi-Si(Ge) layer is an epitaxial layer comprising silicon and germanium;
a metal shield layer on the B doped Epi-Si(Ge) layer;
a dielectric layer on the metal shield layer;
a micro-lens layer on the B doped Epi-Si(Ge) layer; and
a color filter on the micro-lens layer.
19. The BSI sensor device of claim 18 , further comprising an isolation area within the substrate.
20. The BSI sensor device of claim 18 , wherein the B doped Epi-Si(Ge) layer is of thickness in a range about 100 to 700 Å.