Detection matrix with improved biasing conditions and fabrication method
View Patent ↗The detection device includes a semiconductor substrate of a first conductivity type. A matrix of photodiodes organized along a first organization axis is formed on the substrate. Each photodiode is at least partially formed in the substrate. A peripheral biasing ring is formed around the photodiode matrix. The biasing ring is connected to a bias voltage generator. An electrically conducting contact is connected to the substrate and arranged between two photodiodes on the first organization axis. The distance separating the contact from each of the two photodiodes is equal to the distance separating two adjacent photodiodes along the first organization axis. The contact is connected to the bias voltage generator.
1. A detection device comprising:
a semiconductor substrate of a first conductivity type,
a matrix of photodiodes organized along a first organization axis with a repetition pitch, each photodiodes comprising a first electrode formed by an area of a second conductivity type opposite from the first conductivity type and a second electrode formed by the semiconductor substrate,
a peripheral biasing ring disposed around the photodiode matrix, and connected to a bias voltage generator to apply a bias voltage to the semiconductor substrate,
a contact arranged between two photodiodes in the alignment of the first organization axis, the contact being separated from the two photodiodes along the first organization axis by the repetition pitch so that the contact replaces a photodiode,
wherein the contact comprises:
a conducting bump arranged on the semiconductor substrate and connected to the bias voltage generator to apply the bias voltage to the substrate,
a first area of first conductivity type configured to perform passage of the charges between the conducting bump and semiconductor substrate,
a second area of second conductivity type arranged to be in contact with the conducting bump.
2. The device according to claim 1 , wherein the electrically conducting bump short-circuits the first area and second area.
3. The device according to claim 1 , wherein the second area forms a ring around the first area.
4. The device according to claim 1 , comprising a plurality of electrically conducting contacts connected to the semiconductor substrate along the first organization axis, the contacts being arranged between the photodiodes at regular intervals with a first repetition pitch which is a multiple of the repetition pitch of the photodiodes.
5. The device according to claim 4 , wherein the photodetector matrix is organized along a second organization axis, the contacts being arranged along the second organization axis with a second repetition pitch.
6. The device according to claim 1 , wherein a first metal line couples the photodiode to a readout circuit and a second metal line connects the contact to the bias voltage generator.