Metal shield for integrated circuits
A metal shield structure is provided for an integrated circuit (IC) having at least a first metal contact coupled to a fixed potential and a second metal contact. A first passivation layer is located between the first and second metal contacts and on a first portion of the first metal contact and a first portion of the second metal contact, leaving a second portion of the first metal contact and a second portion of the second metal contact uncovered by the first passivation layer. A metal shield layer is provided on the second portion of the first metal contact and on the first passivation layer, and a second passivation layer is formed on the metal shield layer.
1. A shield structure for an integrated circuit (IC) having at least a first metal contact coupled to a fixed potential and a second metal contact, the shield structure comprising:
a first passivation layer between the first and second metal contacts and on and in contact with a first portion of the first metal contact and a first portion of the second metal contact, leaving a second portion of the first metal contact and a second portion of the second metal contact uncovered by the first passivation layer;
a metal shield layer on and in contact with the second portion of the first metal contact and on and in contact with the first passivation layer where the first passivation layer is on and in contact with the first portion of the first metal contact and is on and in contact with the first portion of the second metal contact;
a second passivation layer on and in contact with the metal shield layer; and
a spacer layer covering a vertical edge of the second passivation layer, the metal shield layer and the first passivation layer at a boundary between the first portion and the second portion of the second metal contact to seal the edge of the metal shield layer.
2. The shield structure of claim 1 , wherein the spacer layer is formed of silicon nitride (Si 3 N 4 ).
3. The shield structure of claim 1 , wherein the metal shield layer is formed of titanium nitride (TiN).
4. The shield structure of claim 1 , wherein the metal shield layer has a thickness of no more than 400 Angstroms (Å).
5. The shield structure of claim 1 , wherein the metal shield layer is semi-transparent.
6. The shield structure of claim 1 , wherein the first passivation layer is formed of silicon dioxide (SiO 2 ) or tetraethoxysilane (TEOS).
7. The shield structure of claim 1 , wherein the second passivation layer is formed of silicon nitride (Si 3 N 4 ).
8. The shield structure of claim 1 , wherein the spacer layer is configured to define a region that allows contact with the second portion of the second metal contact.