Organic light emitting diode display and method for manufacturing the same
View Patent ↗An organic light emitting diode display includes a substrate; a first capacitor electrode provided over the substrate and including polysilicon; an insulating layer provided over the first capacitor electrode; and a second capacitor electrode provided over the insulating layer and including a first lower metal layer overlapping with the first capacitor electrode and a first upper metal layer. The first upper metal layer includes a doping opening configured to expose at least a portion of the first lower metal layer.
1. A method of manufacturing an organic light emitting diode display, comprising:
forming a first silicon layer and a second silicon layer over a substrate;
forming an insulating layer over the first silicon layer and the second silicon layer;
forming a lower metal layer over the insulating layer and an upper metal layer over the lower metal layer;
forming a photoresist pattern over the upper metal layer;
dry-etching the upper metal layer by using the photoresist pattern to form a first upper metal portion and a second upper metal portion;
wet-etching the lower metal layer using the photoresist pattern to form a first lower metal portion and a second lower metal portion; and
doping conductive impurity ions to the first silicon layer and the second silicon layer to form a semiconductor comprising a source region, and a drain region, and a first capacitor electrode;
wherein the first upper metal portion comprises a doping opening exposing the first lower metal portion, and wherein the conductive impurity ions are doped to the second silicon layer through the doping opening.
2. The method of claim 1 , wherein the second lower metal portion and the second upper metal portion overlap with a transistor channel region between the drain region and the source region.
3. The method of claim 2 , wherein a width of the doping opening is equal to or less than about 2 μm.
4. The method of claim 2 , wherein a thickness of the lower metal layer is equal to or less than about 1000 Å.
5. The method of claim 2 , wherein a thickness of the upper metal layer is two to four times the thickness of the lower metal layer.
6. The method of claim 1 , wherein the doping opening has a circular or polygonal shape.
7. The method of claim 1 , wherein the first upper metal portion comprises a plurality of stick-shaped branches, and
wherein the doping opening comprises a channel area that is provided between two neighboring branches.
8. The method of claim 1 , wherein the first upper metal portion comprises a circular or polygonal ring which comprises the doping opening.