DISPLAY DEVICE, MANUFACTURING METHOD OF THE SAME AND ELECTRONIC EQUIPMENT HAVING THE SAME
Disclosed herein is a display device including a semiconductor layer, a gate electrode, a source/drain electrode layer, and an organic electric field light-emitting element. The semiconductor layer is provided on a substrate and made of an oxide semiconductor. The gate electrode is provided above a selective first region of the semiconductor layer with a gate insulating film sandwiched therebetween. The source/drain electrode layer is adapted to serve as a source or drain and electrically connected to a second region of the semiconductor layer adjacent to the first region thereof. Also, the organic electric field light-emitting element is provided above a third region of the semiconductor layer different from the first and second region thereof, the organic electric field light-emitting element having a region for the third region that is driven as a pixel electrode.
1 . A display device comprising:
a semiconductor layer provided on a substrate and made of an oxide semiconductor;
a gate electrode provided above a selective first region of the semiconductor layer with a gate insulating film sandwiched therebetween;
a source/drain electrode layer adapted to serve as a source or drain and electrically connected to a second region of the semiconductor layer adjacent to the first region thereof; and
an organic electric field light-emitting element provided above a third region of the semiconductor layer different from the first and second region thereof, the organic electric field light-emitting element having a region for the third region that is driven as a pixel electrode.
2 . The display device according to claim 1 , wherein
the second and third regions are lower in electrical resistivity than the first region.
3 . The display device according to claim 2 comprising:
an interlayer insulating film adapted to cover the gate insulating film and gate electrode, the interlayer insulating film having a first opening for the second region and a second opening for the third region, wherein
the source/drain electrode layer is provided in the region for the first opening of the interlayer insulating film, and the organic electric field light-emitting element is provided in the region for the second opening of the interlayer insulating film.
4 . The display device according to claim 3 , wherein
the interlayer insulating film is made of a photosensitive resin.
5 . The display device according to claim 3 , wherein
the source/drain electrode layer is provided on the interlayer insulating film in such a manner as to fill the first opening, the display device further comprising:
a protective film adapted to cover the source/drain electrode layer on the interlayer insulating film.
6 . The display device according to claim 5 , wherein
the protective film is made of a photosensitive resin.
7 . A manufacturing method of a display device comprising:
forming a semiconductor layer made of an oxide semiconductor on a substrate;
forming a gate electrode above a selective first region of the semiconductor layer with a gate insulating film sandwiched therebetween;
forming a source/drain electrode layer adapted to serve as a source or drain in such a manner to electrically connect the source/drain electrode layer to a second region of the semiconductor layer adjacent to the first region thereof; and
forming an organic electric field light-emitting element above a third region of the semiconductor layer different from the first and second region thereof, the organic electric field light-emitting element having a region for the third region that is driven as a pixel electrode.
8 . The manufacturing method of a display device according to claim 7 , wherein
a plasma treatment is performed following the formation of the gate electrode so as to reduce the electrical resistivity of the second and third regions to a level lower than that of the first region.
9 . The manufacturing method of a display device according to claim 8 comprising:
following the plasma treatment and prior to the formation of the source/drain electrode layer, forming an interlayer insulating film adapted to cover the gate insulating film and gate electrode, the interlayer insulating film having a first opening for the second region and a second opening for the third region, wherein
the source/drain electrode layer is provided in the region for the first opening of the interlayer insulating film, and the organic electric field light-emitting element is provided in the region for the second opening of the interlayer insulating film.
10 . The manufacturing method of a display device according to claim 9 , wherein
a photosensitive resin is used as the interlayer insulating film.
11 . The manufacturing method of a display device according to claim 9 , wherein
during the formation of the source/drain electrode layer, the source/drain electrode layer is formed on the interlayer insulating film in such a manner as to fill the first opening first, and then the source/drain electrode layer is patterned by photolithography.
12 . The manufacturing method of a display device according to claim 11 , wherein
a photosensitive resin used for the patterning of the source/drain electrode layer is heated for reflow so as to form a protective film adapted to cover the source/drain electrode layer on the interlayer insulating film.
13 . Electronic equipment comprising:
a display device including
a semiconductor layer provided on a substrate and made of an oxide semiconductor;
a gate electrode provided above a selective first region of the semiconductor layer with a gate insulating film sandwiched therebetween;
a source/drain electrode layer adapted to serve as a source or drain and electrically connected to a second region of the semiconductor layer adjacent to the first region thereof; and
an organic electric field light-emitting element provided above a third region of the semiconductor layer different from the first and second region thereof, the organic electric field light-emitting element having a region for the third region that is driven as a pixel electrode.