IP Library Patent Application 13420284
Patent Application
App. No. 13/420,284

Method for operating a vacuum Coating apparatus

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Quick Facts
Patent No.
US None
App. No.
13/420,284
Abstract

A method for operating a vacuum coating apparatus, in particular for producing thin-film solar cells, a layer deposition step being carried out, after a coating chamber cleaning step using a cleaning gas and before a product production step, in order to apply a diffusion barrier layer onto the walls of the coating chamber.

Claims (10)

1 . A method for operating a vacuum coating apparatus, for producing thin-film solar cells, the method comprising:

performing a layer deposition task, after a coating chamber cleaning task using a cleaning gas and before a product production task, to apply a diffusion barrier layer onto the walls of the coating chamber.

2 . The method of claim 1 , wherein a gas containing fluorine is used as cleaning gas in the coating chamber cleaning task.

3 . The method of claim 1 , wherein a diffusion barrier layer having at least one of a silicon, silicon oxide, silicon carbide, and silicon nitride is applied in the layer deposition task.

4 . The method of claim 3 , wherein one of an amorphous silicon, a microcrystalline silicon, and a silicon having a transition phase is applied in the layer deposition task.

5 . The method of claim 3 , wherein a layer having amorphous silicon carbide is applied in the layer deposition step.

6 . The method of claim 1 , wherein the layer thickness of the diffusion barrier layer is set as a function of the layer material and of a deposition temperature so that, during the intended operation of the vacuum coating apparatus, the diffusion barrier layer stably adheres completely to the walls of the coating chamber.

7 . The method of claim 6 , wherein the layer thickness of the diffusion barrier layer is set to a value in the range between 5 nm and 500 nm.

8 . The method of claim 1 , wherein the product production task following the layer deposition task includes a deposition of one of an n-doped Si layer, a p-doped Si layer, and an intrinsic Si layer of a thin-film solar cell.

9 . The method of claim 6 , wherein the layer thickness of the diffusion barrier layer is set to a value in the range between 50 nm and 300 nm.

Assignments (3)
CHANGE OF ADDRESS Recorded Jun 6, 2014
From: SOLAR WORLD INDUSTRIES-THUERINGEN GMBH
To: SOLARWORLD INDUSTRIES THUERINGEN GMBH
Reel/Frame 033099/0635 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 4, 2014
From: ROBERT BOSCH GMBH
To: SOLAR WORLD INDUSTRIES-THUERINGEN GMBH
Reel/Frame 032607/0706 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 30, 2012
From: WACHTENDORF, CHRISTIAN
To: ROBERT BOSCH GMBH
Reel/Frame 028671/0741 →