TRANSPARENT CONDUCTIVE FILM AND A DEVICE WITH THE SAME

1 . A transparent conductive film comprising indium oxide containing hydrogen and cerium and having a substantially polycrystalline structure,

wherein specific resistance of the transparent conductive film is no greater than 3.4×10 −4 Ω·cm and carrier mobility is no less than 70 cm 2 /Vs.

2 . The transparent conductive film according to claim 1 ,

where the cerium content is between 1.0×10 20 atoms/cm 3 and 1.4×10 21 atoms/cm 3 .

3 . The transparent conductive film according to claim 1 , where the cerium content is between 2.4×10 20 atoms/cm 3 and 1.2×10 21 atoms/cm 3 .

4 . The transparent conductive film according to claim 1 , where the cerium content is between 4.8×10 20 atoms/cm 3 and 1.0×10 21 atoms/cm 3 .

5 . The transparent conductive film according to claim 1 , where the cerium content is between 7.5×10 20 atoms/cm 3 and 8.5×10 20 atoms/cm 3 .

6 . The transparent conductive film according to claim 1 , where the hydrogen content is in the order of 10 21 atoms/cm 2 .

7 . The transparent conductive film according to claim 1 further comprising substantially polycrystalline structure with a very little amorphous portion and comprises bristled-up pillar-like structures.

8 . The transparent conductive film according to claim 1 further comprising a textured substrate.

9 . The transparent conductive film according to claim 1 , wherein the indium oxide includes sintered indium oxide powder (In 2 O 3 ) and the cerium includes a predetermined amount of cerium oxide powder (CeO 2 ) as a dopant in the sintered indium oxide powder.

10 . The transparent conductive film according to claim 1 , wherein the transparent conductive film is formed on a substrate body.

11 . The transparent conductive film according to claim 10 , wherein the substrate body comprising

an n-type monocrystalline silicon substrate,

a substantially intrinsic i-type amorphous silicon layer formed on the n-type monocrystalline silicon substrate, and

a p-type amorphous silicon layer formed on the i-type amorphous silicon layer,

wherein the transparent conductive film is formed on the p-type amorphous silicon layer.

12 . The transparent conductive film according to claim 10 , wherein a hydrogen content concentration is greater in the substrate body side than in the transparent conductive film surface side.

13 . The transparent conductive film according to claim 12 , wherein the hydrogen content concentration increases gradually toward the substrate body side.

14 . A solar cell comprising:

a glass substrate,

a textured transparent conductive film,

a first-type amorphous silicon layer formed on the transparent conductive film,

a substantially intrinsic i-type amorphous silicon layer formed on the first-type amorphous silicon layer,

a second-type amorphous silicon layer formed on the i-type amorphous silicon layer, and

another transparent conductive film formed on the second-type amorphous silicon layer,

wherein the transparent conductive film comprises indium oxide containing hydrogen and cerium and having a substantially polycrystalline structure, and

wherein specific resistance of the transparent conductive film is no greater than 3.4×10 −4 Ω·cm and carrier mobility is no less than 70 cm 2 /Vs.

15 . A display apparatus comprising a transparent conductive film,

wherein the transparent conductive film comprises indium oxide containing hydrogen and cerium and having a substantially polycrystalline structure,

wherein specific resistance of the transparent conductive film is no greater than 3.4×10 −4 Ω·cm and carrier mobility is no less than 70 cm 2 /Vs.

16 . The display apparatus according to claim 15 , wherein the display apparatus includes a liquid display device.

17 . The display apparatus according to claim 15 , wherein the display apparatus includes an organic electroluminescence device.