Group III nitride semiconductor light-emitting device
A Group III nitride semiconductor light-emitting device having an Ag or Ag alloy reflective film provided in an insulating film, at least a portion of the reflective film is located via the insulating film in a region between an n-lead electrode and at least one of a p-contact electrode having transparency and a p-type layer, wherein a conductive film is formed via the insulating film between the n-lead electrode and the reflective film of the region, and the conductive film is electrically connected to at least one of the p-contact electrode and the p-type layer.
1. A Group III nitride semiconductor light-emitting device, comprising:
an n-type layer;
a p-type layer formed above the n-type layer; and
an Ag or an Ag alloy reflective film provided in an insulating film, at least a portion of the reflective film being located via the insulating film in a region between an n-lead electrode and at least one of a p-contact electrode having transparency and the p-type layer,
wherein a conductive film is formed via the insulating film between the n-lead electrode and the reflective film of the region, and the conductive film is electrically connected to at least one of the p-contact electrode and the p-type layer, and
wherein the reflective film is electrically isolated from the n-lead electrode by the insulating film, and with the n-lead electrode electrically insulated from the reflective film and the conductive film, the n-lead electrode passes through the reflective film and the conductive film, and is electrically connected to the n-type layer.
2. A Group III nitride semiconductor light-emitting device according to claim 1 , wherein the p-contact electrode comprises an ITO electrode.
3. A Group III nitride semiconductor light-emitting device according to claim 1 , wherein the p-contact electrode comprises an intermediate electrode, and the conductive film is connected to the p-contact electrode via the intermediate electrode.
4. A Group III nitride semiconductor light-emitting device according to claim 2 , wherein the p-contact electrode comprises an intermediate electrode, and the conductive film is connected to the p-contact electrode via the intermediate electrode.
5. A Group III nitride semiconductor light-emitting device according to claim 1 , wherein the conductive film is formed in a same or larger than an area including an orthogonal projection of the n-lead electrode on a plane view.
6. A Group III nitride semiconductor light-emitting device according to claim 2 , wherein the conductive film is formed in a same or larger than an area including an orthogonal projection of the n-lead electrode on a plane view.
7. A Group III nitride semiconductor light-emitting device according to claim 3 , wherein the conductive film is formed in a same or larger than an area including an orthogonal projection of the n-lead electrode on a plane view.
8. A Group III nitride semiconductor light-emitting device according to claim 4 , wherein the conductive film is formed in a same or larger than an area including an orthogonal projection of the n-lead electrode on a plane view.
9. A Group III nitride semiconductor light-emitting device according to claim 1 , wherein the conductive film is formed in a same or larger than an area including an orthogonal projection of the reflective film on a plane view.
10. A Group III nitride semiconductor light-emitting device according to claim 2 , wherein the conductive film is formed in a same or larger than an area including an orthogonal projection of the reflective film on a plane view.
11. A Group III nitride semiconductor light-emitting device according to claim 3 , wherein the conductive film is formed in a same or larger than an area including an orthogonal projection of the reflective film on a plane view.
12. A Group III nitride semiconductor light-emitting device according to claim 4 , wherein the conductive film is formed in a same or larger than an area including an orthogonal projection of the reflective film on a plane view.
13. A Group III nitride semiconductor light-emitting device according to claim 1 , wherein a p-lead electrode is provided for connecting to at least one of the p-contact electrode and the p-type layer, and the conductive film is connected to at least one of the p-contact electrode and the p-type layer via the p-lead electrode by connecting the conductive film to the p-lead electrode.
14. A Group III nitride semiconductor light-emitting device according to claim 1 , wherein a p-lead electrode is provided for connecting to at least one of the p-contact electrode and the p-type layer, and the conductive film is connected to at least one of the p-contact electrode and the p-type layer via the p-lead electrode by connecting the conductive film to the p-lead electrode.
15. A Group III nitride semiconductor light-emitting device according to claim 5 , wherein a p-lead electrode is provided for connecting to at least one of the p-contact electrode and the p-type layer, and the conductive film is connected to at least one of the p-contact electrode and the p-type layer via the p-lead electrode by connecting the conductive film to the p-lead electrode.
16. A Group III nitride semiconductor light-emitting device according to claim 9 , wherein a p-lead electrode is provided for connecting to at least one of the p-contact electrode and the p-type layer, and the conductive film is connected to at least one of the p-contact electrode and the p-type layer via the p-lead electrode by connecting the conductive film to the p-lead electrode.
17. A Group III nitride semiconductor light-emitting device according to claim 1 , wherein the conductive film comprises at least one of Al, Ti, Cr, and ITO.
18. A Group III nitride semiconductor light-emitting device according to claim 5 , wherein the conductive film comprises at least one of Al, Ti, Cr, and ITO.
19. A Group III nitride semiconductor light-emitting device according to claim 9 , wherein the conductive film comprises at least one of Al, Ti, Cr, and ITO.
20. A Group III nitride semiconductor light-emitting device according to claim 1 , wherein the light-emitting device comprises a flip-chip type.
21. A Group III nitride semiconductor light-emitting device according to claim 1 , wherein the reflective film is enclosed in the insulating film.