IP Library Granted Patent US 8,956,560
Granted Patent B2
US 8,956,560 · App. 13/423,543 · Granted Feb 17, 2015

Method of manufacturing mold

Inventors: Yasuaki Ootera (Yokohama, JP); Yoshiyuki Kamata (Tokyo, JP); Naoko Kihara (Kawasaki, JP); Yoshiaki Kawamonzen (Machida, JP); Takeshi Okino (Yokohama, JP); Ryosuke Yamamoto (Kawasaki, JP); Tomoyuki Maeda (Kawasaki, JP); Norikatsu Sasao (Tokyo, JP); Akiko Yuzawa (Kawasaki, JP); Takuya Shimada (Yokokohama, JP); Hiroyuki Hieda (Yokohama, JP)
Assignee: Kabushiki Kaisha Toshiba
B29C33/3857G11B5/855
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Quick Facts
Patent No.
US 8,956,560
App. No.
13/423,543
Granted
Feb 17, 2015
Kind
B2
Abstract

In one embodiment, a method of manufacturing a mold includes: forming a first layer having an affinity to a second polymer on a substrate having an affinity to a first polymer; forming first and second openings in the first layer; filling a resist in the second openings and hardening the resist to obtain a hardened resist; and forming a second layer containing a block copolymer and causing it to self-assemble.

Claims (38)

1. A method of manufacturing a mold, comprising:

forming a first layer, having a greater affinity to a second polymer than to a first polymer, on a substrate having a greater affinity to the first polymer than to the second polymer;

forming first openings and second openings in the first layer, the second openings being larger in size than the first openings;

applying a resist as a liquid on the first layer to fill the resist in the second openings, but not in the first openings;

hardening the resist filled in the second openings to obtain a hardened resist;

forming a second layer, containing a block copolymer having the first and second polymers, in the first openings and on the first layer;

causing the block copolymer to self-assemble to form a dot row arranged corresponding to the first openings and containing the first polymer;

removing the hardened resist;

processing the substrate using the dot row as a mask to form a mold having a first area with a shape corresponding to the dot row and a flat second area corresponding to the second openings; and

removing the first and second layers.

2. The method according to claim 1 ,

wherein the size of the first openings is 15 nm or less; and

wherein the resist includes a polymer having a molecular weight equal to or greater than 24000 and equal to or less than 60000.

3. The method according to claim 2 ,

wherein the size of the second openings is equal to or greater than four times the size of the first openings.

4. The method according to claim 1 ,

wherein the size of the first openings is 15 nm or less; and

wherein the resist has a viscosity equal to or greater than 1500 mPa·s and equal to or less than 10000 mPa·s.

5. The method according to claim 4 ,

wherein the size of the second openings is equal to or greater than four times the size of the first openings.

6. The method according to claim 1 ,

wherein the forming of the first openings and second openings, comprises:

forming a layer of a second resist on the first layer;

processing the layer of the second resist to have a shape corresponding to the first and second openings; and

etching the first layer using the processed layer of the second resist as a mask to form the first and second openings,

the method further comprising removing the processed layer of the second resist after the filling and hardening a resist.

7. The method according to claim 6 ,

wherein the processing of the layer of the second resist comprises:

pressing a mold having first and second projections corresponding to the first and second openings against the layer of the second resist; and

hardening the layer of the second resist against which the mold is pressed.

8. The method according to claim 6 ,

wherein a material of the second resist is novolac, PMMA, or PVA.

9. The method according to claim 8 , further comprising

removing the layer of the second resist by wet etching.

10. The method according to claim 1 ,

wherein the block copolymer is at least any one of PS (poly styrene)-PDMS (polydimethylsiloxane), PS-PMMA (polymenthyl methacrylate), PMMA-PMAPOSS (polymethacrylate containing polyhedral oligomeric silsesquioxane), and PS-PEO (polyethylene oxide).

11. The method according to claim 1 ,

wherein, in the forming of a dot row, the block copolymer self-assembles by annealing.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 19, 2012
From: OOTERA, YASUAKI; KAMATA, YOSHIYUKI; KIHARA, NAOKO; KAWAMONZEN, YOSHIAKI; OKINO, TAKESHI; YAMAMOTO, RYOSUKE; MAEDA, TOMOYUKI; SASAO, NORIKATSU; YUZAWA, AKIKO; SHIMADA, TAKUYA; HIEDA, HIROYUKI
To: KABUSHIKI KAISHA TOSHIBA
Reel/Frame 027885/0391 →
Priority Claims (1)
JP P2011-203435 · Sep 16, 2011 · national
Continuity (1)
Related Publication 20130069272A1 · Mar 21, 2013