Method and device for cleaning semiconductor substrate

1. A method for cleaning a semiconductor substrate, comprising:

supplying water vapor to a surface of a semiconductor substrate on which a concave-convex pattern is formed while heating the semiconductor substrate at a predetermined temperature, to form an adsorbed water layer;

stopping the heating and the supply of the water vapor so that the surface of the adsorbed water layer has a concave and convex pattern matching the concave-convex pattern formed on the surface of the semiconductor substrate, and subsequently cooling the semiconductor substrate to freeze water on the semiconductor substrate;

after freezing the water, supplying pure water onto the semiconductor substrate and melting a frozen film; and

after melting the frozen film, drying the semiconductor substrate.

2. The method for cleaning a semiconductor substrate according to claim 1 , wherein the water vapor includes isopropyl alcohol.

3. The method for cleaning a semiconductor substrate according to claim 2 , wherein concentration of the isopropyl alcohol is 5 to 30 wt %.

4. The method for cleaning a semiconductor substrate according to claim 1 , wherein the semiconductor substrate is cooled to −40° C. or lower to freeze water on the semiconductor substrate.

5. The method for cleaning a semiconductor substrate according to claim 1 , wherein an adsorbed water layer is formed on a surface of a particle on a convex pattern by supplying the water vapor.

6. The method for cleaning a semiconductor substrate according to claim 1 , wherein the water vapor is supplied while the semiconductor substrate is being heated so that a surface temperature of the semiconductor substrate is 40° C. to 80° C.

7. The method for cleaning a semiconductor substrate according to claim 1 , wherein a convex portion of the concave-convex pattern is formed between a wide concave portion and a narrow concave portion.