Method of manufacturing semiconductor device

1. A method of manufacturing a semiconductor device, comprising:

forming a contact hole within an interlayer insulating film of a substrate;

forming a barrier metal film and a seed Al film in this order on an inner wall of the contact hole; and

performing the following steps (1)-(3) in this order while the substrate is heated, to form a contact plug:

(1) holding the substrate on a stage within a chamber of a sputtering apparatus through a chuck and increasing an ESC voltage applied to the chuck stepwise in a plurality of steps;

(2) applying first target power to a target within the chamber, to form a first Al film so as to fill the contact hole; and,

(3) applying second target power higher than the first target power to the target within the chamber, to form a second Al film on the first Al film.

2. The method of manufacturing a semiconductor device according to claim 1 ,

wherein in the step (1), the plurality of steps include a first step and a final step, and the ESC voltage in the first step is a half or less of the ESC voltage in the final step.

3. The method of manufacturing a semiconductor device according to claim 1 ,

wherein in the step (1), the plurality of steps include (n−1) and (n) th steps, in which the ESC voltages are applied to the chuck with first and second voltage levels, respectively ((n) means a natural number being larger than one), and

the second voltage level is twice or less as large as the first voltage level.

4. The method of manufacturing a semiconductor device according to claim 1 ,

wherein in the step (3), the second target power is 4 or more times as large as the first target power.

5. The method of manufacturing a semiconductor device according to claim 1 ,

wherein in the step (3), a film-forming rate of the second Al film is 3 or more times as large as a film-forming rate of the first Al film.

6. The method of manufacturing a semiconductor device according to claim 1 ,

wherein in the steps (1) to (3), stage temperature within the chamber is 400 to 450° C.

7. The method of manufacturing a semiconductor device according to claim 1 ,

wherein in the steps (1) to (3), noble gas for controlling substrate temperature is supplied to a space between the substrate and the stage after the ESC voltage has reached a final voltage level.

8. The method of manufacturing a semiconductor device according to claim 1 , further comprising, before forming the contact hole:

forming a wiring layer; and

forming the interlayer insulating film on the wiring layer,

wherein in forming the contact hole, the contact hole is formed within the interlayer insulating film, so as to expose the wiring layer.

9. The method of manufacturing a semiconductor device according to claim 8 ,

wherein the wiring layer includes a TiN film, a third Al film, and a Ti film in this order from a side of the contact hole.

10. The method of manufacturing a semiconductor device according to claim 1 , further comprising, after forming the contact plug, forming a TiN film on the second Al film by a sputtering method.

11. The method of manufacturing a semiconductor device according to claim 1 ,

wherein the barrier metal film is a Ti film.

12. The method of manufacturing a semiconductor device according to claim 1 ,

wherein a thickness of the seed Al film is 150 to 300 nm.

13. The method of manufacturing a semiconductor device according to claim 1 ,

wherein an aspect ratio of the contact hole is 3 or lower.

14. A method of manufacturing a semiconductor device, comprising:

forming a contact hole within an interlayer insulating film of a substrate;

forming a barrier metal film and a seed Al film in this order on an inner wall of the contact hole; and

performing the following steps (1)-(3) in this order while the substrate is heated, to form a contact plug:

(1) holding the substrate on a stage within a chamber of a sputtering apparatus through a chuck and increasing an ESC voltage applied to the chuck stepwise in three steps to a first voltage, a second voltage, and a third voltage, in this order;

(2) applying first target power to a target within the chamber, to form a first Al film so as to fill the contact hole; and,

(3) applying second target power higher than the first target power to the target within the chamber, to form a second Al film on the first Al film.

15. The method of manufacturing a semiconductor device according to claim 14 ,

wherein in the step (1), the second voltage is twice as large as the first voltage, and

the third voltage is four times as large as the first voltage.

16. The method of manufacturing a semiconductor device according to claim 14 ,

wherein in the step (3), the second target power is 4 to 5 times as large as the first target power.

17. The method of manufacturing a semiconductor device according to claim 14 , further comprising, before forming the contact hole:

forming a wiring layer; and

forming the interlayer insulating film on the wiring layer,

wherein in forming the contact hole, the contact hole is formed within the interlayer insulating film, so as to expose the wiring layer.

18. The method of manufacturing a semiconductor device according to claim 17 , wherein the wiring layer includes a TiN film, a third Al film, and a Ti film in this order from a side of the contact hole.

19. The method of manufacturing a semiconductor device according to claim 11 ,

wherein a thickness of theta film is 50 to 30 nm.