Metal wiring structure, organic light-emitting display device and method of manufacturing the organic light-emitting display device

1. An organic light-emitting display device, comprising:

a substrate;

an anode electrode formed on the substrate;

an organic layer formed on the anode electrode;

a cathode electrode formed on the organic layer; and

an organic capping layer formed on the cathode electrode and containing a capping organic material and a rare-earth material which has higher oxidizing power than a material which forms the cathode electrode.

2. The display device of claim 1 , wherein the rare-earth material is Yb.

3. The display device of claim 1 , wherein the rare-earth material is added at no greater than 15 wt % of the organic capping layer.

4. The display device of claim 1 , wherein the organic layer comprises a hole injecting layer, a hole transporting layer, an emitting layer, an electron transporting layer, and an electron injecting layer, wherein the hole injecting layer is made of a same material as the hole transporting layer and is doped with p-type impurities.

5. The display device of claim 4 , wherein the hole injecting layer and the hole transporting layer are repeatedly and alternately stacked to form a plurality of layers.

6. The display device of claim 1 , wherein the cathode electrode contains Ag and Yb.

7. The display device of claim 1 , wherein the organic capping layer has a refractive index of not less than 1.5.

8. The display device of claim 1 , wherein the organic layer is a top emission organic layer which emits light to a top of the organic light-emitting display device through the organic capping layer.

9. A method of manufacturing an organic light-emitting display device, the method comprising the steps of:

providing a lower substrate;

forming an anode electrode on the lower substrate;

forming an organic layer on the anode electrode;

forming a cathode electrode on the organic layer; and

forming an organic capping layer on the cathode electrode, the organic capping layer containing a capping organic material and a rare-earth material having higher oxidizing power than a material which forms the cathode electrode.

10. The method of claim 9 , wherein the rare-earth material is Yb.

11. The method of claim 9 , wherein the step of forming the organic capping layer comprises depositing the capping organic material and the rare-earth material simultaneously.

12. The method of claim 9 , wherein the step of forming the organic capping layer comprises despositing the rare-earth material at not greater than 15 wt % of the organic capping layer.

13. The method of claim 9 , wherein the step of forming the organic layer comprises forming a hole injecting layer, a hole transporting layer, an emitting layer, an electron transporting layer, and an electron injecting layer, wherein the hole injecting layer is made of a same material as the hole transporting layer and is doped with p-type impurities.

14. The method of claim 13 , wherein the step of forming the organic layer further comprises repeatedly and alternately stacking the hole injecting layer and the hole transporting layer so as to form a plurality of layers.

15. The method of claim 9 , wherein the step of forming the organic layer comprises:

depositing a hole transporting layer material; and

doping a portion of the hole transporting layer material with p-type impurities.

16. The method of claim 15 , wherein the step of forming the organic layer further comprises depositing the hole transporting layer material again on the portion of the hole transporting layer material doped with the p-type impurities.

17. The method of claim 9 , wherein the cathode electrode contains Ag and Yb.