Display device and electronic apparatus
View Patent ↗A sampling transistor in embodiments of the present invention is kept at the on-state with a time width shorter than one horizontal cycle, during the period from the rising of a control pulse supplied from a scanner to the falling of the control pulse, and samples a video signal Vsig from a signal line SL to write the video signal Vsig to a hold capacitor. A sampling transistor T 1 has a double gate structure in which a pair of transistor elements are connected in common. This suppresses change in the threshold voltage of the sampling transistor.
1. A display device comprising:
a plurality of scan lines, a plurality of supply lines, and a plurality of pixels that are arranged in a matrix; and
wherein at least one of the pixels includes a first transistor, a second transistor, a hold capacitor, and a light emitting element,
the first transistor has a gate connected to one of the scan lines and is connected between one of the supply lines and a gate of the second transistor,
the second transistor is connected between a power supply and the light-emitting element,
the hold capacitor holds a voltage corresponding to a supply line voltage provided from the supply line,
the first transistor being kept at an on-state during a period shorter than one horizontal cycle,
the first transistor having a double gate structure, and
the second transistor causing a drive current dependent on the voltage to flow to the light-emitting element for light emission.
2. The display device according to claim 1 , wherein the double gate structure of the first transistor includes a pair of transistor elements that are connected in series between the supply line and the gate of the drive transistor, and gates of the pair of transistor elements are connected in common.
3. The display device according to claim 2 , wherein in the first transistor, a capacitor is formed between the gate of the first transistor and an intermediate node that interconnects the pair of transistor elements.
4. The display device according to claim 3 , wherein a film thickness of an insulating film that forms the capacitor is larger than a film thickness of an insulating film between the gates of the pair of transistor elements and channels of the pair of transistor elements.
5. The display device according to claim 2 , wherein channel regions of the pair of transistor elements are covered by a metal that is formed on an opposite side to the gates of the pair of transistor elements with intermediary of channels of the pair of transistor elements and is at the same potential as potential of the gates of the pair of transistor elements.
6. The display device according to claim 2 , wherein the pair of transistor elements are different from each other in channel length.
7. The display device according to claim 2 , wherein of the pair of transistor elements, the transistor element closer to the supply line has a channel length larger than a channel length of the transistor element closer to the gate of the drive transistor.
8. The display device according to claim 6 , wherein the pair of transistor elements have the same channel width.
9. An electronic apparatus including the display device of claim 1 .
10. The electronic apparatus according to claim 9 , wherein the double gate structure of the first transistor includes a pair of transistor elements that are connected in series between the supply line and the gate of the drive transistor, and gates of the pair of transistor elements are connected in common.
11. The electronic apparatus according to claim 10 , wherein in the first transistor, a capacitor is formed between the gate of the first transistor and an intermediate node that interconnects the pair of transistor elements.
12. The electronic apparatus according to claim 11 , wherein a film thickness of an insulating film that forms the capacitor is larger than a film thickness of an insulating film between the gates of the pair of transistor elements and channels of the pair of transistor elements.
13. The electronic apparatus according to claim 10 , wherein channel regions of the pair of transistor elements are covered by a metal that is formed on an opposite side to the gates of the pair of transistor elements with intermediary of channels of the pair of transistor elements and is at the same potential as potential of the gates of the pair of transistor elements.
14. The electronic apparatus according to claim 10 , wherein the pair of transistor elements are different from each other in channel length.
15. The electronic apparatus according to claim 10 , wherein of the pair of transistor elements, the transistor element closer to the supply line has a channel length larger than a channel length of the transistor element closer to the gate of the drive transistor.
16. The electronic apparatus according to claim 15 , wherein the pair of transistor elements have the same channel width.