Semiconductor die package and method for making the same
Semiconductor die packages are disclosed. An exemplary semiconductor die package includes a premolded substrate. The premolded substrate can have a semiconductor die attached to it, and an encapsulating material may be disposed over the semiconductor die.
1. A semiconductor die package comprising:
a premolded substrate including a leadframe structure and a molding material, wherein the leadframe structure includes a first conductive portion, a second conductive portion, and an intermediate portion between the first conductive portion and the second conductive portion, and wherein the intermediate portion includes a cavity that electrically isolates the first conductive portion and the second conductive portion;
a semiconductor die on the premolded substrate; and
an encapsulating material covering the semiconductor die and filling the cavity between the first conductive portion and the second conductive portion.
2. The semiconductor die package of claim 1 wherein the semiconductor die comprises a power MOSFET.
3. The semiconductor die package of claim 1 wherein the semiconductor die comprises a vertical device.
4. The semiconductor die package of claim 1 wherein the semiconductor die has a first surface distal to the substrate and a second surface proximate to the substrate, wherein the package further includes wirebonds electrically coupling the first surface of the die to the substrate.
5. The semiconductor die package of claim 1 wherein the semiconductor die is directly over an insulated portion of the substrate.
6. The semiconductor die package of claim 1 wherein the semiconductor die package does not have leads extending laterally away from the encapsulating material.
7. The semiconductor die package of claim 1 wherein the cavity was formed by cutting the intermediate portion.
8. The semiconductor die package of claim 1 wherein the cavity was formed by cutting the intermediate portion using a saw, a laser, or a water jet.
9. The semiconductor die package of claim 1 wherein the attached semiconductor die overlaps with at least a portion of the first conductive portion.
10. The semiconductor die package of claim 1 wherein the leadframe structure further comprises a conductive central portion inside of a region defined by a plurality of first conductive portions.