IP Library Granted Patent US 8,324,618
Granted Patent B2
US 8,324,618 · App. 13/432,009 · Granted Dec 4, 2012

Light emitting device

Assignee: Semiconductor Energy Laboratory Co., Ltd.
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Quick Facts
Patent No.
US 8,324,618
App. No.
13/432,009
Granted
Dec 4, 2012
Kind
B2
Abstract

The present invention provides a TFT that has a channel length particularly longer than that of an existing one, specifically, several tens to several hundreds times longer than that of the existing one, and thereby allowing turning to an on-state at a gate voltage particularly higher than the existing one and driving, and allowing having a low channel conductance gd. According to the present invention, not only the simple dispersion of on-current but also the normalized dispersion thereof can be reduced, and other than the reduction of the dispersion between the individual TFTs, the dispersion of the OLEDs themselves and the dispersion due to the deterioration of the OLED can be reduced.

Claims (62)

1. A light emitting device comprising:

a first wiring;

a second wiring;

a first transistor over a substrate;

a second transistor over the substrate;

an insulating film over the second transistor;

a first electrode over the insulating film;

an organic compound layer over the first electrode;

a second electrode over the organic compound layer;

a silicon nitride film over the second electrode; and

wherein the first transistor comprises a first channel region and a second channel region, a first gate and a second gate corresponding to the first channel region and the second channel region respectively,

wherein the first wiring is directly connected to the first gate and the second gate of the first transistor,

wherein the second wiring is directly connected to one of a source and a drain of the second transistor,

wherein one of a source and a drain of the first transistor is directly connected to a gate of the second transistor,

wherein a channel width of the second transistor is smaller than a channel length of the second transistor, and

wherein the first wiring is parallel to the second wiring.

2. A light emitting device according to claim 1 , wherein the second transistor comprises a polysilicon film.

3. A light emitting device as set forth in claim 1 , wherein a ratio of the channel width of the second transistor to the channel length of the second transistor is from 0.1 to 0.01.

4. A light emitting device according to claim 1 , wherein the second transistor is an n-channel type transistor.

5. A light emitting device according to claim 1 , wherein the light emitting device is incorporated into an electronic equipment selected from the group consisting of a personal computer, a video camera, a mobile computer, a goggle type display, a recording medium, a digital camera, a mobile phone and a display.

6. A light emitting device comprising:

a first wiring;

a second wiring;

a first transistor over a substrate;

a second transistor over the substrate;

an insulating film over the second transistor;

a first electrode over the insulating film;

an organic compound layer over the first electrode;

a second electrode over the organic compound layer;

a silicon nitride film over the second electrode; and

an organic resin over the second electrode;

wherein the first transistor comprises a first channel region, a second channel region, a first gate, and a second gate,

wherein the first wiring is directly connected to the first gate and the second gate of the first transistor,

wherein the second wiring is directly connected to one of a source and a drain of the second transistor,

wherein one of a source and a drain of the first transistor is directly connected to a gate of the second transistor,

wherein a channel width of the second transistor is smaller than a channel length of the second transistor, and

wherein the first wiring does not cross the second wiring.

7. A light emitting device according to claim 6 , wherein the second transistor comprises a polysilicon film.

8. A light emitting device as set forth in claim 6 , wherein a ratio of the channel width W of the second transistor to the channel length of the second transistor is from 0.1 to 0.01.

9. A light emitting device according to claim 6 , wherein the second transistor is an n-channel type transistor.

10. A light emitting device according to claim 6 , wherein the light emitting device is incorporated into an electronic equipment selected from the group consisting of a personal computer, a video camera, a mobile computer, a goggle type display, a recording medium, a digital camera, a mobile phone and a display.

11. A light emitting device comprising:

a first wiring;

a second wiring;

a first transistor over a substrate;

a second transistor over the substrate;

an insulating film over the second transistor;

a first electrode over the insulating film;

an organic compound layer over the first electrode;

a second electrode over the organic compound layer;

a silicon nitride film over the second electrode; and

an organic resin over the second electrode;

wherein the first transistor comprises a first channel region, a second channel region, a first gate, and a second gate,

wherein the first wiring is directly connected to the first gate and the second gate of the first transistor,

wherein the second wiring is directly connected to one of a source and a drain of the second transistor,

wherein one of a source and a drain of the first transistor is directly connected to a gate of the second transistor,

wherein a channel width of the second transistor is smaller than a channel length of the second transistor, and

wherein an extended direction of the first wiring is parallel to an extended direction of the second wiring.

12. A light emitting device according to claim 11 , wherein the second transistor comprises a polysilicon film.

13. A light emitting device as set forth in claim 11 , wherein a ratio of the channel width of the second transistor to the channel length of the second transistor is from 0.1 to 0.01.

14. A light emitting device according to claim 11 , wherein the second transistor is an n-channel type transistor.

15. A light emitting device according to claim 11 , wherein the light emitting device is incorporated into an electronic equipment selected from the group consisting of a personal computer, a video camera, a mobile computer, a goggle type display, a recording medium, a digital camera, a mobile phone and a display.

Priority Claims (2)
JP 2001-344671 · Nov 9, 2001 · national
JP 2002-010766 · Jan 18, 2002 · national
Continuity (3)
Division 12758862 · Apr 13, 2010
Division 10286868 · Nov 4, 2002
Related Publication 20120181540A1 · Jul 19, 2012