Laser crystallization apparatus and laser crystallization method using the same
View Patent ↗A laser crystallization device is provided, which includes a vibration device vibrating a laser beam along its long axis, wherein a vibration frequency at which the laser beam vibrates is satisfied by Equation 1 below. F <( P*f )/(2* W ) Equation 1 where F is the mirror vibration frequency, W is the laser beam width, P is the laser scan pitch, and f is the laser pulse frequency.
1. A laser crystallization device comprising:
a laser beam generating device generating a laser beam;
a mirror positioned in a path of the laser beam; and
a vibration device vibrating the mirror at a mirror vibration frequency to vibrate the laser beam along a long axis of the laser beam,
wherein the mirror vibration frequency is satisfied by Equation 1 below:
F <( P*f )/(2 *W ) Equation 1
wherein F is the mirror vibration frequency, W is a width of the laser beam, P is a scan pitch of the laser beam along a substrate, and f is a pulse frequency of the laser beam.
2. A laser crystallization device comprising:
a laser beam generating device generating a laser beam;
a mirror positioned in a path of the laser beam;
a vibration device vibrating the mirror at a mirror vibration frequency to vibrate the laser beam along a long axis of the laser beam; and
a substrate including thin film transistors positioned along a scan direction of the laser beam,
wherein the mirror vibration frequency is satisfied by Equation 2 below:
F <( P*f )/ Ts Equation 2
wherein F is the mirror vibration frequency, P is a scan pitch of the laser beam along the substrate, f is a pulse frequency of the laser beam, Ts is a spacing between thin film transistors along the scan direction.
3. The laser crystallization device of claim 2 , wherein
the mirror vibration frequency is satisfied by Equation 3 below:
F <( P*f )/( Ts+W ) Equation 3
wherein W is a width of the laser beam.
4. The laser crystallization device of claim 2 , wherein
the mirror vibration frequency is satisfied by Equation 4 below:
F <( P*f )/(3 *Ts ). Equation 4
5. The laser crystallization device of claim 2 , wherein
the mirror vibration frequency is satisfied by Equation 5 below:
F <( P*f )/(3 *Ts+W ) Equation 5
wherein W is a width of the laser beam.
6. A laser crystallization device comprising
a laser beam generating device generating a laser beam;
a mirror positioned in a path of the laser beam;
a vibration device vibrating the mirror at a mirror vibration frequency to vibrate the laser beam along a long axis of a laser beam, and
a substrate including thin film transistors positioned along a scan direction of the laser beam,
wherein the mirror vibration frequency is satisfied by Equation 6 below:
F <(3 *Tm*P*f )/(2 *Ts*A ) Equation 6
wherein F is the mirror vibration frequency, P is a scan pitch of the laser beam along the substrate, f is a pulse frequency of the laser beam, Ts is a spacing between thin film transistors along the scan direction, A is a mirror vibration distance, Tm is a spacing between thin film transistors in a mirror vibration direction.
7. The laser crystallization device of claim 6 , wherein
the mirror vibration frequency is satisfied by Equation 7 below:
F <( Tm*P*f )/(2 *Ts*A ). Equation 7
8. The laser crystallization device of claim 6 , wherein
the mirror vibration frequency is satisfied by Equation 8 below:
F <( Tm*P*f )/(6 *Ts*A ). Equation 8