Magnetoresistive sensor having a structure for activating and deactivating electrostatic discharge prevention circuitry
View Patent ↗A structure for preventing Electrostatic Discharge (ESD) damage to a magnetoresistive sensor during manufacture. The structure includes a switching element that can be switched off during testing of the sensor and then switched back on to provide ESD shunting to the sensor. The switch can be a thermally activated mechanical relay built onto the slider. The switch could also be a programmable resistor that includes a solid electrolyte sandwiched between first and second electrodes. One of the electrodes functions as an anode. When voltage is applied in a first direction an ion bridge forms across through the electrolyte across electrodes making the resistor conductive. When a voltage is applied in a second direction, the ion bridge recedes and the programmable resistor becomes essentially non-conductive.
1. A structure for preventing electrostatic discharge damage to a magnetoresistive sensor, the structure comprising:
a slider;
a magnetoresistive sensor formed on the slider; and a programmable resistor formed on the slider and capable of selectively providing electrical shunting to the sensor;
wherein the programmable resistor is connected with circuitry arranged to provide electrical connection between the sensor and the programmable resistor;
wherein the programmable resistor comprises first and second electrodes and a solid state electrolyte sandwiched between the first and second electrodes.
2. The structure as in claim 1 wherein the solid state electrolyte comprises a Ge-chalcogenide glass.
3. The structure as in claim 1 wherein the solid state electrolyte comprises a material selected from the group consisting of GeSe and GeS.
4. The structure as in claim 1 wherein the solid state electrolyte comprises an oxide.
5. The structure as in claim 1 wherein the solid state electrolyte comprises WO 3 .
6. The structure as in claim 1 wherein the one of the first and second electrodes comprises a first material and wherein the electrolyte comprises a second material that includes some of the first material.
7. A structure for preventing electrostatic discharge damage to a magnetoresistive sensor, the structure comprising:
a slider;
a magnetoresistive sensor formed on the slider; and a programmable resistor formed on the slider and capable of selectively providing electrical shunting to the sensor;
wherein the programmable resistor is connected with circuitry arranged to provide electrical connection between the sensor and the programmable resistor;
wherein the programmable resistor comprises:
a first electrode comprising W;
a second electrode comprising Cu; and
a solid state electrolyte containing Cu sandwiched between the first and second electrodes.
8. A structure for preventing electrostatic discharge damage to a magnetoresistive sensor, the structure comprising:
a slider;
a magnetoresistive sensor formed on the slider, and a programmable resistor formed on the slider and capable of selectively providing electrical shunting to the sensor;
wherein the programmable resistor is connected with circuitry arranged to provide electrical connection between the sensor and the programmable resistor;
wherein the programmable resistor comprises:
a first electrode comprising W;
a second electrode comprising Ag; and
a solid state electrolyte containing Ag sandwiched between the first and second electrodes.