Systems and methods for a thin film capacitor having a composite high-K thin film stack
View Patent ↗Systems and methods are provided for fabricating a thin film capacitor involving depositing an electrode layer of conductive material on top of a substrate material, depositing a first layer of ferroelectric material on top of the substrate material using a metal organic deposition or chemical solution deposition process, depositing a second layer of ferroelectric material on top of the first layer using a high temperature sputter process and depositing a metal interconnect layer to provide electric connections to layers of the capacitor.
1. A thin film capacitor prepared by a process comprising:
depositing an electrode layer of conductive material on a substrate material;
depositing a seed layer of ferroelectric material on the electrode layer utilizing a deposition process that forms a randomly-oriented grain structure;
depositing a second layer of ferroelectric material on the seed layer using a high temperature sputter process in a manner that forms a columnar-oriented grain structure; and
depositing a metal interconnect layer to provide electric connections for the capacitor.
2. The thin film capacitor of claim 1 , wherein one of the seed layer of ferroelectric material or the second layer of ferroelectric material is a doped barium strontium titanate material and the other of the seed layer or second layer is an undoped barium strontium titanate material.
3. The thin film capacitor of claim 1 , wherein the second layer is about six times as thick as the seed layer of ferroelectric material.
4. The thin film capacitor of claim 1 , wherein the seed layer of ferroelectric material and the second layer of ferroelectric material are different materials.
5. The thin film capacitor of claim 1 , wherein the seed and second layers are part of a mesa structure.
6. The thin film capacitor of claim 1 , wherein the seed layer of ferroelectric material comprises an undoped Barium Strontium Titanate material.
7. The thin film capacitor of claim 1 , wherein the seed layer of ferroelectric material is about 0.06 μm in thickness.
8. The thin film capacitor of claim 1 , wherein the second layer of ferroelectric material is about 0.23 μm in thickness.
9. A thin film capacitor comprising:
a substrate;
an electrode layer on the substrate;
a seed layer of ferroelectric material on the electrode layer, wherein the seed layer includes a randomly-oriented grain structure;
a second layer of ferroelectric material on the seed layer, wherein the second layer includes a columnar-oriented grain structure; and
a metal interconnect layer for providing electric connections for the capacitor, wherein one of the seed or second layers of ferroelectric material is a doped barium strontium titanate material and the other of the seed or second layers is an undoped barium strontium titanate material.
10. The thin film capacitor of claim 9 , wherein the seed and second layers are part of a mesa structure.
11. The thin film capacitor of claim 9 , wherein the seed layer of ferroelectric material is about 0.06 μm in thickness.
12. The thin film capacitor of claim 9 , wherein the second layer of ferroelectric material is about 0.23 μm in thickness.
13. The thin film capacitor of claim 9 , wherein the second layer is about six times as thick as the seed layer of ferroelectric material.
14. The thin film capacitor of claim 9 , comprising:
a planarizing and insulating layer on the second layer, wherein vias are formed in the planarizing and insulating layer.
15. The thin film capacitor of claim 14 , wherein the metal interconnect layer is deposited in the vias to provide the electric connections for the capacitor.
16. A thin film capacitor comprising:
a seed layer of ferroelectric material on an electrode layer, wherein the seed layer includes a randomly-oriented grain structure;
a second layer of ferroelectric material on the seed layer, wherein the second layer includes a columnar-oriented grain structure;
a metal interconnect layer for providing electric connections for the capacitor; and
first and second insulating layers, wherein the electrode layer is formed on the first insulating layer, wherein the second insulating layer is formed over the second layer of ferroelectric material, and wherein the metal interconnect layer is formed over the second insulating layer.
17. The thin film capacitor of claim 16 , wherein the seed layer of ferroelectric material is about 0.06 μm in thickness, and wherein one of the seed or second layers of ferroelectric material is a doped barium strontium titanate material and the other of the seed or second layers is an undoped barium strontium titanate material.
18. The thin film capacitor of claim 16 , comprising a nitride layer formed over the metal interconnect layer, wherein electrical contacts are formed through the nitride layer in contact with the metal interconnect layer.
19. The thin film capacitor of claim 16 , wherein one of the seed or second layers of ferroelectric material is a doped barium strontium titanate material and the other of the seed or second layers is an undoped barium strontium titanate material.
20. The thin film capacitor of claim 16 , wherein the seed layer of ferroelectric material and the second layer of ferroelectric material are different materials.