Light emitting device with translucent ceramic plate

1. A light emitting device comprising:

a light emitting component that emits light with a first peak wavelength of about 440 nm to about 470 nm;

at least one sintered ceramic plate configured to absorb at least a portion of the light emitted from said light emitting component, wherein the at least one sintered ceramic plate comprises a multiphasic material, said multiphasic material comprises about 90% to about 99.99% by volume of an emissive phase and about 10% to about 0.01% by volume of a second phase; and

wherein the at least one sintered ceramic plate is capable of emitting light of a second peak wavelength, and has a total light transmittance at the second peak wavelength of greater than about 40%.

2. The light emitting device of claim 1 , wherein the multiphasic material comprises about 95% to about 99.99% by volume of the emissive phase and about 5% to about 0.01% by volume of the second phase.

3. The light emitting device of claim 1 , wherein the multiphasic material comprises about 98% to about 99.95% by volume of the emissive phase and about 2% to about 0.05% by volume of the second phase.

4. The light emitting device of claim 1 , wherein said at least one sintered ceramic plate is prepared by using nano-sized raw ceramic powders having an average particle size of less than 1000 nm.

5. The light emitting device of claim 1 , wherein said at least one sintered ceramic plate further comprises about 0.05% to about 5% by weight of a sintering aid.

6. The light emitting device of claim 5 , wherein said sintering aid is selected from the group consisting of MgO, SiO 2 and tetraethyl orthosilicate.

7. The light emitting device of claim 1 , wherein the emissive phase comprises a phosphor material.

8. The light emitting device of claim 7 , wherein the phosphor material comprises a garnet represented by the formula A 3 B 5 O 12 , wherein A and B are trivalent metals, and wherein A is selected from Y, Gd, La, and Tb, and B is selected from Al, Ga, and In.

9. The light emitting device of claim 8 , wherein said garnet is doped with at least one rare earth metal.

10. The light emitting device of claim 9 , wherein said rare earth metal is selected from Ce, Gd, La, Tb, Pr and Eu.

11. The light emitting device of claim 7 , wherein said phosphor material comprises Y 3 A 1 5 O 12 :Ce 3+ .

12. The light emitting device of claim 1 , wherein said second phase comprises at lease one metal oxide.

13. The light emitting device of claim 1 , wherein said second phase comprises at least one of Y 2 O 3 , Al 2 O 3 , YAP, or YAM.

14. The light emitting device of claim 1 , wherein said second phase comprises at least one of Al 2 O 3 or Y 2 O 3 .

15. A method for producing light comprising:

exposing at least one sintered ceramic plate comprising a multiphasic material to radiation, wherein said multiphasic material comprises about 90% to about 99.99% by volume of an emissive phase and about 10% to about 0.01% by volume of a second phase, wherein the at least one sintered ceramic plate has a transmittance of at least about 40% at the peak transmission wavelength.

16. The method of claim 15 , wherein the multiphasic material comprises about 95% to about 99.99% by volume of the emissive phase, and about 5% to about 0.01% by volume of the second phase.

17. The method of claim 15 , wherein the multiphasic material comprises about 98% to about 99.99% by volume of the emissive phase, and about 2% to about 0.01% by volume of the second phase.

18. The method of claim 15 , wherein the multiphasic material comprises about 98% to about 99.95% by volume of the emissive phase and about 2% to about 0.05% by volume of the second phase.

19. The method of claim 15 , wherein the radiation has a peak wavelength of about 350 nm to about 410 nm.

20. The method of claim 15 , wherein the radiation has a peak wavelength of about 440 nm to about 470 nm.