IP Library Granted Patent US 8,490,857
Granted Patent B2
US 8,490,857 · App. 13/436,843 · Granted Jul 23, 2013

Reflow apparatus, a reflow method, and a manufacturing method of a semiconductor device

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Quick Facts
Patent No.
US 8,490,857
App. No.
13/436,843
Granted
Jul 23, 2013
Kind
B2
Abstract

A reflow apparatus, where formic acid is used for cleaning a surface of a solder electrode on a processing target, is disclosed. The reflow apparatus includes a processing chamber, a formic acid introduction mechanism for supplying an atmosphere gas containing formic acid to the processing chamber, and a shielding member that is made of a material having corrosion resistance against formic acid. The shielding member is arranged between a reflow processing section of the processing chamber and an inner wall of the processing chamber. In place of or in addition to the shielding member, the reflow apparatus may include a heater for decomposing residual formic acid.

Claims (15)

1. A reflow method, comprising:

heating, with a first heater, a processing target on which a solder member is mounted;

supplying an atmosphere gas containing formic acid to the processing target when the processing target reaches a first temperature; performing a fusion process on the solder member when the processing target reaches a second temperature; and

performing a thermolysis process of decomposing the formic acid, with a second heater, when the fusion process performed on the solder member is completed;

wherein the second heater is located on an upper inner wall and on a bottom inner wall and on a side inner wall of a processing chamber, and a shield member fully covering the second heater.

2. A manufacturing method of manufacturing a semiconductor device, comprising:

placing and heating, with a first heater, a processing target that has a solder electrode in a predetermined position in a processing chamber;

supplying an atmosphere gas containing formic acid to the processing chamber when the processing target reaches a first temperature;

forming the solder electrode into a solder bump by thermal fusion when the processing target reaches a second temperature; and

performing a thermolysis process of decomposing the formic acid with a second heater, and lowering the temperature of the processing target to the first temperature after formation of the solder bump;

wherein the second heater is located on an upper inner wall and on a bottom inner wall and on a side inner wall of the processing chamber, and a shield member fully covering the second heater.

3. The reflow method as claimed in claim 1 , wherein the thermolysis process of decomposing the formic acid is performed at a temperature equal to or greater than 200° C.

4. The reflow method as claimed in claim 1 ,

wherein the first heater is located below the processing target; and the second heater is located on the inner wall of the processing chamber.

5. The manufacturing method as claimed in claim 2 , wherein the first heater is located below the processing target; and the second heater is located on the inner wall of the processing chamber.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 27, 2015
From: FUJITSU SEMICONDUCTOR LIMITED
To: SOCIONEXT INC.
Reel/Frame 035508/0469 →