Composition for removing a photoresist and method of manufacturing a thin-film transistor substrate using the composition
View Patent ↗A composition for removing a photoresist, the composition including about 1% by weight to about 10% by weight of tetramethyl ammonium hydroxide (“TMAH”), about 1% by weight to about 10% by weight of an alkanol amine, about 50% by weight to about 70% by weight of a glycol ether compound, about 0.01% by weight to about 1% by weight of a triazole compound, about 20% by weight to about 40% by weight of a polar solvent, and water, each based on a total weight of the composition.
1. A composition for removing a photoresist, the composition comprising:
about 1% by weight to about 10% by weight of tetramethyl ammonium hydroxide;
about 1% by weight to about 10% by weight of an alkanol amine;
about 50% by weight to about 70% by weight of a glycol ether compound;
about 0.01% by weight to about 1% by weight of a triazole compound;
about 20% by weight to about 40% by weight of a polar solvent; and
water, each based on a total weight of the composition.
2. The composition of claim 1 , wherein the glycol ether compound comprises dimethylene glycol monomethyl ether.
3. The composition of claim 1 , wherein the polar solvent comprises N-methyl-2-pyrrolidone.
4. The composition of claim 1 , wherein the composition consists of the tetramethyl ammonium hydroxide, the alkanol amine, the glycol ether compound, the triazole compound, the polar solvent, and water.
5. A composition for removing a photoresist, the composition comprising:
about 1% by weight to about 5% by weight of tetramethyl ammonium hydroxide;
about 1% by weight to about 5% by weight of an alkanol amine;
about 55% by weight to about 65% by weight of dimethylene glycol monomethyl ether;
about 20% by weight to about 40% by weight of N-methyl-2-pyrrolidone;
about 0.01% by weight to about 1% by weight of a triazole compound; and
water, each based on a total weight of the composition.
6. A method of manufacturing a thin-film transistor substrate, the method comprising:
providing a thin-film transistor on a base substrate;
forming a first organic layer by disposing a photosensitive organic composition on the base substrate on which the thin-film transistor is disposed;
removing at least a portion of the first organic layer by contacting the first organic layer with a composition for removing an organic pattern, the composition comprising
about 1% by weight to about 10% by weight of tetramethyl ammonium hydroxide,
about 1% by weight to about 10% by weight of an alkanol amine,
about 50% by weight to about 70% by weight of a glycol ether compound,
about 0.01% by weight to about 1% by weight of a triazole compound,
about 20% by weight to about 40% by weight of a polar solvent, and
water, each based on a total weight of the composition;
forming a second organic layer on the base substrate from which the first organic layer is removed; and
forming a pixel electrode on the second organic layer, wherein the pixel electrode is electrically connected to the thin-film transistor, to manufacture the thin-film transistor substrate.
7. The method of claim 6 , wherein the glycol ether compound is dimethylene glycol monomethyl ether,
the triazole compound is tolytriazole and
the polar solvent is N-methyl-2-pyrrolidone.
8. The method of claim 6 , wherein the composition for removing the organic pattern comprises:
about 1% by weight to about 5% by weight of tetramethyl ammonium hydroxide,
about 1% by weight to about 5% by weight of the alkanol amine,
about 55% by weight to about 65% by weight of dimethylene glycol monomethyl ether,
about 20% by weight to about 40% by weight of N-methyl-2-pyrrolidone,
about 0.01% by weight to about 1% by weight of the triazole compound, and
water, each based on a total weight of the composition.
9. The method of claim 6 , wherein the photosensitive organic composition is a negative photoresist and a portion of the organic pattern, which is not exposed to a light, is soluble in a developing solution.
10. The method of claim 6 , wherein the photosensitive organic composition is a positive photoresist and a portion of the organic pattern, which is exposed to a light, is soluble in a developing solution.
11. The method of claim 6 , further comprising forming an inorganic layer on the base substrate on which the thin-film transistor is formed before the forming of the first organic layer,
wherein the inorganic layer and the first organic layer each includes a contact hole which exposes an output electrode of the thin-film transistor.
12. The method of claim 6 , wherein the providing the thin-film transistor comprises:
forming a metal layer including aluminum or copper on the base substrate; and
forming an input electrode connected to a data line and an output electrode spaced apart from the input electrode by patterning the metal layer.
13. The method of claim 12 , wherein the forming the input electrode comprises:
forming a photoresist pattern on the metal layer;
etching the metal layer using the photoresist pattern; and
removing at least a portion of the photoresist pattern using a composition for removing a photoresist, wherein the composition for removing a photoresist comprises the composition for removing the organic pattern.
14. The method of claim 13 , wherein the photoresist pattern is formed using a negative photoresist composition wherein a portion of the organic pattern, which is not exposed to a light, is soluble in a developing solution.
15. The method of claim 13 , wherein the photoresist pattern is formed using a positive photoresist composition wherein a portion of the organic pattern, which is exposed to a light, is soluble in the developing solution.
16. The method of claim 13 , wherein the removing at least a portion of the first organic layer comprises removing an entirety of the first organic layer.
17. A method of manufacturing a thin-film transistor substrate, the method comprising:
forming a metal layer on a base substrate;
forming a photoresist pattern on the metal layer;
patterning the metal layer using the photoresist pattern as an etch-stopping layer to form a first signal line and a first electrode of a thin-film transistor connected to the first signal line;
removing at least a portion of the photoresist pattern by contacting the photoresist pattern with a composition for removing a photoresist, the composition comprising
about 1% by weight to about 10% by weight of tetramethyl ammonium hydroxide,
about 1% by weight to about 10% by weight of an alkanol amine,
about 50% by weight to about 70% by weight of dimethylene glycol monomethyl ether,
about 20% by weight to about 40% by weight of N-methyl-2-pyrrolidone,
about 0.01% by weight to about 1% by weight of a triazole compound, and
water, each based on a total weight of the composition; and
forming a pixel electrode electrically connected to the thin-film transistor to manufacture the thin-film transistor substrate.
18. The method of claim 17 , wherein the composition for removing the photoresist comprises:
about 1% by weight to about 5% by weight of tetramethyl ammonium hydroxide,
about 1% by weight to about 5% by weight of the alkanol amine,
about 55% by weight to about 65% by weight of dimethylene glycol monomethyl ether,
about 20% by weight to about 40% by weight of N-methyl-2-pyrrolidone,
about 0.01% by weight to about 1% by weight of the triazole compound, and
water, each based on a total weight of the composition.
19. The method of claim 18 , wherein the photoresist pattern is formed using a negative photoresist composition wherein a portion of the photoresist pattern, which is not exposed to a light, is soluble in a developing solution.
20. The method of claim 18 , wherein the photoresist pattern is formed using a positive photoresist composition wherein a portion of the photoresist pattern, which is exposed to a light, is soluble in a developing solution.
21. The method of claim 18 , wherein the metal layer comprises aluminum or copper.
22. The method of claim 18 , wherein the first signal line is a gate line and the first electrode is a gate electrode, and
further comprising forming a second signal line crossing the first signal line, a second electrode connected to the second signal line, and a third electrode spaced apart from the second electrode before forming the pixel electrode.
23. The method of claim 18 , wherein the first signal line is a data line, the first electrode is an input electrode, and a second electrode is formed in the patterning of the metal layer to form the first signal line and the first electrode,
further comprising forming a second signal line crossing the first signal line and a third electrode as a control electrode connected to the second signal line before the forming of the pixel electrode.
24. The method of claim 18 , wherein the removing at least a portion of the photoresist pattern comprises removing an entirety of the photoresist pattern.