Method of manufacturing display apparatus

1. A method of manufacturing a display apparatus, the method comprising:

forming a first substrate including a plurality of pixels;

forming a black column spacer on the first substrate;

forming a second substrate; and

forming a liquid crystal layer between the first substrate and the second substrate,

wherein the forming of the black column spacer comprises:

coating a photoresist on the first substrate, the photoresist comprising a first initiator and a second initiator;

exposing the photoresist to a first light which corresponds to the first initiator;

developing the exposed photoresist; and

exposing the developed photoresist to a second light which corresponds to the second initiator,

wherein the first and second initiators have different maximum energy absorption wavelengths from each other.

2. The method of claim 1 , wherein the black column spacer comprises:

a black matrix which overlaps a portion of the pixels; and

a column spacer on the black matrix, wherein the column spacer maintains a distance between the first substrate and the second substrate.

3. The method of claim 2 , wherein the black matrix and the column spacer are a single, unitary, indivisible member.

4. The method of claim 3 , wherein the forming the first substrate comprises:

forming a thin film transistor on a first insulating substrate;

forming a protective layer which overlaps the thin film transistor;

forming a color filter on the protective layer; and

forming a pixel electrode which is connected to the thin film transistor.

5. The method of claim 4 , wherein the color filter is provided in a plural number and the color filters respectively correspond to the pixels such that the pixels display different colors from each other.

6. The method of claim 5 , wherein the black column spacer is between adjacent color filters.

7. The method of claim 1 , wherein the maximum energy absorption wavelength of the first initiator is longer than the maximum energy absorption wavelength of the second initiator.

8. The method of claim 7 , wherein the first light has a wavelength corresponding to the maximum energy absorption wavelength of the first initiator and the second light has a wavelength corresponding to the maximum energy absorption wavelength of the second initiator.

9. The method of claim 8 , wherein the second initiator comprises at least one of an ester initiator, an oxime initiator, an imidazole initiator or a mercaptan initiator.

10. The method of claim 9 , wherein the second initiator is at least one compound of the following formulas,

11. The method of claim 1 , wherein an amount of the first light is greater than an amount of the second light.

12. The method of claim 1 , wherein the photoresist is a negative photoresist.

13. The method of claim 1 , further comprising baking the photoresist after the developed photoresist is exposed to the second light.

14. The method of claim 1 , wherein the liquid crystal layer is a vertical electric field mode liquid crystal layer.