IP Library Granted Patent US 8,358,419
Granted Patent B2
US 8,358,419 · App. 13/440,808 · Granted Jan 22, 2013

Integrated plasmonic sensing device and apparatus

Inventor: Robert Joseph Walters (Redwood City, CA)
Assignee: Integrated Plasmonics Corporation
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 8,358,419
App. No.
13/440,808
Granted
Jan 22, 2013
Kind
B2
Abstract

An integrated plasmonic sensing device is monolithically integrated and provides marker-free detection (eliminating the need to use fluorescent or absorbing markers) and in-situ monitoring of conditions at each detection region. The integrated plasmonic sensing device includes a plasmonic backplane disposed on a monolithically integrated image sensor. One or more plasmonic scattering regions and one or more plasmonic via regions laterally offset from the plasmonic scattering regions are provided in the plasmonic sensing device. Guided plasmonic modes mediate power transfer through the plasmonic backplane to one or more underlying image sensor pixels.

Claims (11)

1. A method of manufacturing a monolithic sensor comprising the steps of:

providing an image sensor having a plurality of photodetectors,

coating the image sensor with a dielectric material,

stamp forming features in the dielectric material coated on the image sensor,

coating the stamped dielectric material with a metal to at least in part form a plasmonic backplane having a plurality of measurement regions, with at least some of the measurement regions having plasmonic scattering features formed from the metal coated stamped dielectric material, and

defining plasmon vias that connect the plasmonic scattering features to at least some of the plurality of photodetectors of the image sensor.

2. A method of manufacturing a sensor in accordance with claim 1 , further comprising the step forming a fluid chamber over the plasmonic backplane.

3. A method of manufacturing a sensor in accordance with claim 1 , further comprising the step of connecting more than one of the plurality of photodetectors to one of the plurality of measurement regions by one or more plasmon vias.

4. A method of manufacturing a sensor in accordance with claim 1 , further comprising the step of connecting more than one of plurality of measurement regions to one of the plurality of photodetectors by one or more plasmon vias.

5. A method of manufacturing a sensor in accordance with claim 1 , further comprising the step of positioning at least some of the plurality of measurement regions laterally offset from and connected to one or more photodetectors by one or more plasmon vias.

6. A method of manufacturing a sensor in accordance with claim 1 , further comprising the step of attaching tethered molecules for molecular recognition of biological or chemical substances to at least some of the plurality of measurement regions.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 5, 2012
From: WALTERS, ROBERT JOSEPH
To: INTEGRATED PLASMONICS CORPORATION
Reel/Frame 027999/0307 →
Continuity (3)
Provisional Application 61472188 · Apr 5, 2011
Provisional Application 61472154 · Apr 5, 2011
Related Publication 20120257204A1 · Oct 11, 2012