Crucible for Growing Crystals
A crucible is used for allowing a seed crystal to grow via the source of materials. The crucible includes a growth chamber, a holder, a reflecting device, and a plurality of gas guiding devices. The holder is located on the top of the crystal growth chamber for holding the seed. The reflecting device is located around the holder. The plurality of gas guiding devices is located on the bottom of the growth chamber, for containing the material source and guiding the gasification or vaporization of the material source.
1 . A crucible including:
a growth chamber 10 for containing a material source 91 ;
a holder 20 attached to an upper internal portion of the growth chamber 10 for holding a seed crystal 90 ;
a reflector 30 placed around the holder 20 for reflecting thermal radiation L; and
a gas-guiding device placed on a lower internal portion of the growth chamber 10 for guiding gas produced by sublimation of the material source 91 .
2 . The crucible according to claim 1 , wherein the reflector 30 is placed at an angle A that is changeable in a range of 0 to 30 degrees.
3 . The crucible according to claim 2 , wherein the gas-guiding device includes gas-guiding elements 40 , 40 a arranged in groups extending along concentric circles around an axis of the growth chamber 10 .
4 . The crucible according to claim 3 , wherein the groups get shorter in an outward radial direction.
5 . The crucible according to claim 4 , wherein the gas-guiding elements 40 , 40 a extend higher than the material source 91 .
6 . The crucible according to claim 5 , wherein each of the gas-guiding elements 40 is a needle with a diameter smaller than 2 millimeters.
7 . The crucible according to claim 5 , wherein each of the gas-guiding elements 40 a is a rod with a diameter larger than 2 millimeters.
8 . The crucible according to claim 2 , wherein the gas-guiding device includes gas-guiding elements 40 b in the form of concentric annular sheets extending around an axis of the growth chamber 10 .
9 . The crucible according to claim 2 , wherein the gas-guiding device includes a single gas-guiding element 40 c is the form of a spiral sheet.
10 . The crucible according to claim 1 , wherein the reflector 30 is made of a material selected from the group consisting of a high-temperature metal carbide and a material identical to that of the material source 91 , wherein the material source 91 is made of a material selected from the group consisting of an oxide, a carbide, a nitride and a fluoride.
11 . The crucible according to claim 1 , wherein the gas-guiding element is made of a material selected from the group consisting of a high-temperature metal carbide and a material identical to that of the material source 91 , wherein the material source 91 is made of a material selected from the group consisting of an oxide, a carbide, a nitride and a fluoride.
12 . The crucible according to claim 11 , wherein the gas-guiding element stands high temperature of 1500° C. to 3000° C.
13 . A reflector for a crucible including a holder 20 , wherein the reflector 30 is placed around the holder 20 for reflecting thermal radiation L.
14 . The reflector according to claim 13 , wherein the reflector 30 is placed at an angle A that is changeable in a range of 0 to 30 degrees.
15 . The reflector according to claim 13 , wherein the reflector 30 is made of a material selected from the group consisting of a high-temperature metal carbide and a material identical to that of a material source 91 , wherein the material source 91 is made of a material selected from the group consisting of an oxide, a carbide, a nitride and a fluoride.
16 . A gas-guiding device for guiding gas produced by sublimation of a material source 91 placed in a lower internal portion of a growth chamber 10 of a crucible.
17 . The gas-guiding device according to claim 16 including gas-guiding elements 40 , 40 a arranged in groups extending along concentric circles around an axis of the growth chamber 10 , wherein the groups 40 , 40 a get shorter in an outward radial direction.
18 . The gas-guiding device according to claim 17 , wherein the gas-guiding elements 40 , 40 a extend higher than the material source 91 .
19 . The gas-guiding device according to claim 16 including concentric annular sheets extending around an axis of the growth chamber 10 .
20 . The gas-guiding device according to claim 16 including a spiral sheet extending around an axis of the growth chamber 10 .