Back-side illuminated image sensor provided with a transparent electrode
A back-side illuminated image sensor formed from a thinned semiconductor substrate, wherein: a transparent conductive electrode, insulated from the substrate by an insulating layer, extends over the entire rear surface of the substrate; and conductive regions, insulated from the substrate by an insulating coating, extend perpendicularly from the front surface of the substrate to the electrode.
1. A back-side illuminated image sensor formed from a thinned semiconductor substrate, wherein:
a transparent conductive electrode, insulated from the substrate by an insulating layer, extends over the entire rear surface of the substrate; and
conductive regions, insulated from the substrate by an insulating coating, that extend perpendicularly from the front surface of the substrate to the electrode, and surround a portion of the substrate on at least two sides,
wherein said conductive regions delimit a first substrate portion, inside and/or on top of which are formed photodiodes, and a second substrate portion, inside and/or on top of which are formed control transistors of the sensor.
2. The sensor of claim 1 , wherein contacting areas are arranged on the front surface side of said conductive regions, and are capable of biasing, in operation, said regions and said electrode to a same voltage.
3. The sensor of claim 1 , wherein the thickness of the insulating layer and the thickness of the insulating coating are substantially identical.
4. The sensor of claim 1 , wherein said conductive regions are made of doped polysilicon.
5. The sensor of claim 1 , wherein said electrode is made of indium-tin oxide.
6. The sensor of claim 1 , wherein said substrate is of type P.
7. A use of the sensor of claim 6 , wherein the substrate is biased to a first voltage, the conductive regions and the electrode being biased to a second voltage smaller than the first voltage.
8. A use of the sensor of claim 1 , wherein different substrate portions are biased to different voltages.
9. The sensor of claim 1 , further comprising at least two unit pixels electrically separated by the conductive regions.
10. A back-side illuminated image sensor formed from a thinned semiconductor substrate, comprising:
a transparent conductive electrode, insulated from the substrate by an insulating layer, extends over the entire rear surface of the substrate; and
conductive regions, insulated from the substrate by an insulating coating, that surround one or more photodiodes corresponding to a single unit pixel of the image sensor on at least two sides,
wherein said conductive regions delimit a first substrate portion, inside and/or on top of which are formed photodiodes, and a second substrate portion, inside and/or on top of which are formed control transistors of the sensor.
11. The sensor of claim 10 , wherein contacting areas are arranged on the front surface side of said conductive regions, and are capable of biasing, in operation, said regions and said electrode to a same voltage.
12. The sensor of claim 10 , wherein the thickness of the insulating layer and the thickness of the insulating coating are substantially identical.
13. The sensor of claim 10 , wherein said conductive regions are made of doped polysilicon.
14. The sensor of claim 10 , wherein said electrode is made of indium-tin oxide.
15. The sensor of claim 10 , wherein said substrate is of type P.
16. The sensor of claim 10 , wherein the conductive regions extend perpendicularly from the front surface of the substrate to the electrode.
17. The sensor of claim 10 , further comprising at least two unit pixels electrically separated by the conductive regions.