IP Library Granted Patent US 9,070,801
Granted Patent B2
US 9,070,801 · App. 13/446,051 · Granted Jun 30, 2015

Method to texture a lamina surface within a photovoltaic cell

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Quick Facts
Patent No.
US 9,070,801
App. No.
13/446,051
Granted
Jun 30, 2015
Kind
B2
Abstract

It is advantageous to create texture at the surface of a photovoltaic cell to reduce reflection and increase travel length of light within the cell. A method is disclosed to create texture at the surface of a silicon body by reacting a silicide-forming metal at the surface, where the silicide-silicon interface is non-planar, then stripping the silicide, leaving behind a textured surface. Depending on the metal and the conditions of silicide formation, the resulting surface may be faceted. The peak-to-valley height of this texturing will generally be between about 300 and about 5000 angstroms, which is well-suited for use in photovoltaic cells comprising a thin silicon lamina.

Claims (10)

1. A photovoltaic device including an emitter and a base comprising:

a substantially crystalline semiconductor lamina having a first surface and a second surface opposite the first surface, the second surface being a cleaved surface, the lamina being doped to a first conductivity, and the lamina comprising the base region of the photovoltaic device;

a receiver element attached to the first surface of the lamina; and

a layer of amorphous silicon disposed directly on the second surface of the lamina, at least a part of the amorphous silicon being heavily doped;

wherein the heavily doped amorphous silicon comprises the emitter of the photovoltaic device.

2. The device of claim 1 further comprising a conductive material disposed between the lamina and the receiver element.

3. The device of claim 2 wherein the conductive material is cobalt.

4. The device of claim 2 further comprising a dielectric layer disposed between the conductive material and the receiver element.

5. The device of claim 2 wherein the heavily doped amorphous silicon is doped to a second conductivity type opposite the first conductivity type.

6. The device of claim 2 wherein, at least a part of the amorphous silicon is intrinsic amorphous silicon.

Assignments (4)
CHANGE OF NAME Recorded May 16, 2023
From: NEUTRON THERAPEUTICS, INC.
To: NEUTRON THERAPEUTICS LLC
Reel/Frame 063662/0362 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 4, 2015
From: GTAT CORPORATION D/B/A GT ADVANCED TECHNOLOGIES
To: NEUTRON THERAPEUTICS INC.
Reel/Frame 037047/0004 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 9, 2012
From: SILICON VALLEY BANK; TWIN CREEKS TECHNOLOGIES, INC.
To: GTAT CORPORATION
Reel/Frame 029275/0076 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 5, 2012
From: HERNER, S. BRAD
To: TWIN CREEKS TECHNOLOGIES, INC.
Reel/Frame 028321/0062 →