Solid-state imaging device and method for manufacturing the same
View Patent ↗The present invention achieves an optical characteristic exhibiting excellent sensitivity or the like, by increasing the opening dimension of an optical waveguide without changing the interconnection layout, so that the optical waveguide can surely be filled with a film having high refractive index. Pixel portion A of a solid-state imaging device includes photodiode PD formed on a semiconductor substrate; a first insulating film including a concave portion above photodiode PD; and a second insulating film formed on the first insulating film such that the concave portion is filled with the second insulating film. Peripheral circuit portion B of the solid-state imaging device includes an internal interconnection formed in the first insulating film and a pad electrode formed on the internal interconnection to be electrically connected to the internal interconnection. The pad electrode is formed on the second insulating film.
1. A solid-state imaging device that is formed on a semiconductor substrate and that includes a pixel portion and a peripheral circuit portion, wherein
the pixel portion includes:
a photodiode that is formed on the semiconductor substrate;
a first insulating film that is formed on the semiconductor substrate and that includes a concave portion above the photodiode; and
an optical waveguide that is formed in the concave portion and that guides light to the photodiode, wherein the optical waveguide is structured with a second insulating film with which the concave portion is filled, and a portion of the second insulating film positioned on an outer side of the concave portion in the pixel portion is formed on the first insulating film and contacts the top face of the first insulating film,
the peripheral circuit portion includes:
an interconnection that is formed in one of the first insulating film and an interlayer insulating film being an identical-level layer as the first insulating film;
a pad portion that is formed on the interconnection and that is electrically connected to the interconnection; and
a third insulating film that is formed on the first insulating film in the peripheral circuit portion, wherein the pad portion is formed on the third insulating film.
2. The solid-state imaging device according to claim 1 , wherein
the second insulating film and the third insulating film are a continuous film made of an identical material.
3. The solid-state imaging device according to claim 1 , wherein
the second insulating film and the third insulating film are made of different materials, and
the third insulating film is a film made of a material lower than the second insulating film in a refractive index.
4. The solid-state imaging device according to claim 1 , wherein
the third insulating film has a refractive index smaller than 1.75.
5. The solid-state imaging device according to claim 1 , wherein
the second insulating film has a refractive index greater than 1.75.
6. The solid-state imaging device according to claim 1 , wherein
the second insulating film includes one of silicon nitride and silicon oxynitride.
7. The solid-state imaging device according to claim 1 , wherein
the second insulating film is structured with a film made up of at least two layers.
8. The solid-state imaging device according to claim 7 , wherein
a peripheral portion at a top end of the concave portion of at least a first one of the two layers of the second insulating film is formed so as to widen upward.
9. The solid-state imaging device according to claim 1 , wherein
a height of a top face of the second insulating film in the pixel portion and a height of a top face of the third insulating film in the peripheral circuit portion are identical to each other.
10. The solid-state imaging device according to claim 1 , wherein
the interconnection includes copper as its main component, and the pad portion includes aluminum as its main component.