Solid-state imaging device and method for manufacturing the same
View Patent ↗A solid-state imaging device and a method for manufacturing the same are provided. The solid-state imaging device includes a structure that provides a high sensitivity and high resolution without variations in spectral sensitivity and without halation of colors, and prevents light from penetrating into an adjacent pixel portion. A plurality of photodiodes are formed inside a semiconductor substrate. A wiring layer includes a laminated structure of an insulating film and a wire and is formed on the semiconductor substrate. A plurality of color filters are formed individually in a manner corresponding to the plurality of photodiodes above the wiring layer. A planarized film and a microlens are sequentially laminated on each of the color filters. In the solid-state imaging device, each of the color filters has an refraction index higher than that of the planarized film and has, in a Z-axis direction, an upper surface in a concave shape.
1. A solid-state imaging device comprising:
a semiconductor substrate including a plurality of light-receiving portions formed therein and individually having photoelectric conversion functions;
a wiring layer formed on the semiconductor substrate and having a laminated structure of an insulating film and a wire, the wiring layer having recesses in positions individually corresponding to above the plurality of light-receiving portions;
a plurality of color filters formed in a manner corresponding to the plurality of light-receiving portions individually on the wiring layer;
an upper layer formed on the plurality of color filters and including microlenses formed in a manner corresponding to the plurality of light-receiving portions individually,
wherein each of the color filters has a refraction index higher than a refraction index of a portion of the upper layer which makes contact with an upper surface of the color filter, and an upper surface and a lower surface of each of the color filters has a concave shape respectively; and
a second insulating film having a refraction index higher than a refraction index of the color filter formed on the semiconductor substrate, wherein an upper surface of the second insulating film has an upward convex shape corresponding to the concave shape of the lower surface of each of the color filters.
2. The solid-state imaging device according to claim 1 ,
wherein partition walls are individually inserted between the color filters that are adjacent to each other, and
the refraction index of the color filters is higher than a refraction index of the partition walls.
3. The solid-state imaging device according to claim 2 ,
wherein each of the partition walls has side faces that are inclined so that a section width of the partition wall gradually increases from an upper side to a lower side in a direction of lamination.
4. The solid-state imaging device according to claim 2 ,
wherein a portion of the upper surface of the color filter which is most depressed is positioned lower, in the direction of lamination, than a top of the partition wall.
5. The solid-state imaging device according to claim 1 ,
wherein the wiring layer has recesses in positions individually corresponding to above the plurality of light-receiving portions, and
the second insulating film is buried inside each of the recesses.
6. The solid-state imaging device according to claim 1 ,
wherein the color filters are formed with a thickness of at least 400 nm.
7. The solid-state imaging device according to claim 1 ,
wherein an amount of a depression of the concave shape of the upper surface of each of the color filters is 50 nm or larger and 200 nm or smaller.
8. A method for manufacturing a solid-state imaging device, comprising:
forming, inside a semiconductor substrate, a plurality of light-receiving portions individually having photoelectric conversion functions;
forming, on the semiconductor substrate, a wiring layer having a laminated structure of an insulating film and a wire;
forming, on the semiconductor substrate, a second insulating film;
forming, on the second insulating film, a plurality of color filters in a manner corresponding to the plurality of light-receiving portions individually; and
forming, on the plurality of color filters, an upper layer including at least microlenses individually corresponding to the plurality of light-receiving portions,
wherein, in said forming the plurality of color filters, the plurality of color filters are arranged to have a refraction index higher than a refraction index of a portion of the upper layer which makes contact with the upper surface of the color filter and lower than a refraction index of the second insulating film, and to have each of the upper and lower surfaces thereof in a concave shape corresponding to an upward convex shape of the second insulating film.
9. The method for manufacturing a solid-state imaging device according to claim 8 , further comprising, subsequent to said forming the wiring layer but prior to said forming the plurality of color filters, forming, on the wiring layer, partition walls in a grid pattern with openings provided in positions individually corresponding to above the plurality of light-receiving portions,
wherein, in said forming the plurality of color filters, each of the color filters is formed in each of the openings opened in each of the partition walls.
10. The method for manufacturing a solid-state imaging device according to claim 8 ,
wherein, in said forming the wiring layer, recesses are provided in positions individually corresponding to above the plurality of light-receiving portions, and
wherein the method further comprises, subsequent to said forming the wiring layer but prior to said forming the plurality of color filters, burying the second insulating film inside each of the recesses.