Method to form a device by constructing a support element on a thin semiconductor lamina
View Patent ↗A semiconductor assembly is described in which a support element is constructed on a surface of a semiconductor lamina. Following formation of the thin lamina, which may have a thickness about 50 microns or less, the support element is formed, for example by plating, or by application of a precursor and curing in situ, resulting in a support element which may be, for example, metal, ceramic, polymer, etc. This is in contrast to pre-formed support element which is affixed to the lamina following its formation, or to a donor wafer from which the lamina is subsequently cleaved. Fabricating the support element in situ may avoid the use of adhesives to attach the lamina to a permanent support element. In some embodiments, this process flow allows the lamina to be annealed at high temperature, then to have an amorphous silicon layer formed on each face of the lamina following that anneal.
1. A method to fabricate a device, the method comprising the steps of:
providing a monocrystalline semiconductor lamina having a thickness about 50 microns or less, the lamina having a first surface and a second surface opposite the first;
constructing a permanent support element on the first surface of the lamina; and
fabricating a device.
2. The method of claim 1 wherein the device is a photovoltaic cell, and wherein the lamina comprises a base in the photovoltaic cell.
3. The method of claim 1 wherein the lamina has a thickness between about 4 microns and about 20 microns.
4. The method of claim 1 wherein the lamina is monocrystalline silicon.
5. The method of claim 1 wherein the step of constructing a permanent support element comprises the steps of:
applying a ceramic mixture to the first surface; and
curing the mixture to form the permanent support element;
wherein the permanent support element comprises ceramic.
6. The method of claim 1 wherein the step of constructing a permanent support element comprises the steps of:
applying polymer in liquid form to the first surface; and
curing the polymer, wherein the permanent support element comprises the polymer.
7. The method of claim 1 wherein the step of constructing a permanent support element comprises the step of:
applying a metal to the first surface, wherein the permanent support element comprises the metal.
8. The method of claim 1 wherein the step of providing a semiconductor lamina comprises:
implanting ions into a semiconductor donor body to define a cleave plane; and
cleaving the lamina from the donor body at the cleave plane;
wherein the step of cleaving the lamina from the donor body takes place before the step of constructing a permanent support element on the first surface of the lamina.
9. The method of claim 1 further comprising forming one, two, or more layers on the first surface of the lamina before the step of constructing a permanent support element, wherein, in the completed device, the one, two or more layers are disposed between the lamina and the permanent support element.
10. The method of claim 1 further comprising, before the step of constructing a permanent support element on the first surface of the lamina, annealing the lamina to a temperature of at least 850 degrees C.
11. The method of claim 1 wherein a first layer of amorphous silicon is disposed between the lamina and the permanent support element.
12. The method of claim 2 wherein, in the photovoltaic cell, light enters the lamina at the second surface.
13. The method of claim 7 wherein the step of applying a metal comprises electroplating a metal onto the first surface.
14. The method of claim 8 wherein, during the cleaving step, the first surface of the donor wafer is not permanently affixed to a support element.
15. The method of claim 11 further comprising forming a second layer of amorphous silicon on the second surface of the lamina.
16. The method of claim 15 wherein the second layer of amorphous silicon comprises an emitter of the photovoltaic cell.
17. A method to form a device, the method comprising the steps of:
implanting a monocrystalline semiconductor donor body with ions to define a cleave plane;
cleaving a semiconductor lamina from the donor body at the cleave plane, wherein the lamina has a first surface and a second surface opposite the first;
after the cleaving step, constructing a permanent metal support element on the first surface of the lamina; and
fabricating a device.
18. The method of claim 17 wherein the device is a photovoltaic cell, and wherein the lamina comprises a base region of the photovoltaic cell.
19. The method of claim 17 wherein the lamina is monocrystalline silicon.
20. The method of claim 17 wherein the lamina has a thickness between about 4 microns and about 20 microns.