Semiconductor device including a delay locked loop circuit

1. A semiconductor device comprising a DLL (Delay Locked Loop) circuit, wherein said DLL circuit comprises:

a delay unit generating a second clock signal by delaying a first clock signal;

a phase comparator circuit comparing said first clock signal and a signal generated by further delaying said second clock signal;

a counter circuit outputting a count value that determines a delay amount of said delay unit to said delay unit, and up/down operating in response to a result of the phase comparison by said phase comparator circuit; and

an initial delay amount control circuit detecting a cycle of said first clock signal at the time of initial setting operation, and outputting an initial value of said count value depending upon the detected cycle to said counter circuit,

wherein said initial delay amount control circuit comprises:

a pulse signal generating unit generating a pulse signal having a pulse width proportional to the cycle of said first clock signal;

a plurality of delay elements connected in series delaying said pulse signal;

a detection unit detecting which of a plurality of delay elements said pulse signal is transmitted to during said pulse width of said pulse signal; and

a code generation unit generating the initial value of said count value based on a result detected by said detection unit.

2. A semiconductor device comprising a DLL (Delay Locked Loop) circuit, wherein said DLL circuit comprises:

a delay unit generating a second clock signal by delaying a first clock signal;

a phase comparator circuit comparing said first clock signal and a signal generated by further delaying said second clock signal;

a counter circuit outputting a count value that determines a delay amount of said delay unit to said delay unit, and up/down operating in response to a result of the phase comparison by said phase comparator circuit; and

an initial delay amount control circuit detecting a cycle of said first clock signal at the time of initial setting operation, and outputting an initial value of said count value depending upon the detected cycle to said counter circuit,

wherein said initial delay amount control circuit counts number of pulses included in said first clock signal during a predetermined period, and generates the initial value of said count value based on a result of the count.

3. A semiconductor device comprising a DLL (Delay Locked Loop) circuit, wherein said DLL circuit comprises:

a delay unit generating a second clock signal by delaying a first clock signal;

a phase comparator circuit comparing said first clock signal and a signal generated by further delaying said second clock signal;

a counter circuit outputting a count value that determines a delay amount of said delay unit to said delay unit, and up/down operating in response to a result of the phase comparison by said phase comparator circuit; and

an initial delay amount control circuit detecting a cycle of said first clock signal at the time of initial setting operation, and outputting an initial value of said count value depending upon the detected cycle to said counter circuit; and

an output unit that outputs data to outside in response to a read command,

wherein said second clock signal comprises a signal controlling an output timing of said output unit.

4. The semiconductor device according to claim 3 , wherein said counter circuit up/down operates by a binary search method.

5. The semiconductor device according to claim 3 , wherein said counter circuit up/down operates by a linear search method.

6. A semiconductor device comprising:

a counter circuit storing code information;

a delay control circuit receiving a first clock signal and producing a second clock signal, a difference in phase between the first and second clock signals being controlled by the code information; and

an initial code control circuit receiving the first clock signal and controlling an initial value of the code information in response to a length of a clock cycle period of the first clock signal,

wherein the initial code control circuit sets the initial code to a first value when the length of the clock cycle period of the first clock signal is a first length and sets the initial code to a second value greater than the first value when the length of the clock cycle period of the first clock signal is a second length longer than the first length.

7. The semiconductor device according to claim 6 , further comprising:

a data output circuit outputting data in synchronism with the second clock signal;

a replica circuit replicate of the data output circuit, the replica circuit receiving the second clock signal and producing a third clock signal; and

a phase comparator circuit receiving the first and third clock signals, comparing phases of the first and third clock signals with each other, and updating the code information from the initial value in response to a result of the comparing.

8. The semiconductor device according to claim 6 , wherein the delay control circuit includes a delay circuit receiving the first clock signal and producing a plurality of fourth clock signals, the fourth clock signals being different in phase from one another and wherein the initial code control circuit includes:

a pulse control circuit receiving the first clock signal and producing a pulse signal, a width of the pulse signal being determined in response to the length of a clock cycle period of the first clock signal, the width of the pulse signal being defined as an active period of the pulse signal;

a plurality of gate circuits each including an output node, a control gate receiving the pulse signal and an input node receiving a corresponding one of the fourth clock signals, allowing the corresponding one of the fourth clock signals to pass therethrough during the active period of the pulse signal, and inhibiting the corresponding one of the fourth clock signals from passing therethrough during an inactive period other than the active period of the pulse signal; and

a code control circuit coupled to each of the output nodes of the gate circuits, generating the initial value of the code information based on a selected one or ones of the fourth clock signals respectively supplied with the output nodes.

9. A semiconductor device comprising:

a counter circuit storing code information;

a delay control circuit receiving a first clock signal and producing a second clock signal, a difference in phase between the first and second clock signals being controlled by the code information; and

an initial code control circuit receiving the first clock signal and controlling an initial value of the code information in response to a length of a clock cycle period of the first clock signal,

wherein the delay control circuit includes:

a delay circuit receiving the first clock signal and producing a plurality of fourth clock signals, the fourth clock signals being different in phase from one another; and

a delay select circuit receiving the fourth clock signals, selecting one of the fourth clock signals in response to the code information and producing the one of the fourth clock signals as the second clock signal.

10. A semiconductor device comprising:

a counter circuit configured to store code information;

a delay control circuit configured to receive a first clock signal and to produce a second clock signal, a difference between the first and second clock signals being controlled by the code information; and

an initial code control circuit configured to receive the first clock signal, to set an initial value of the code information to a first value when a length of a clock cycle period of the first clock signal is a first length, and to set the initial value of the code information to a second value different from the first value when the length of the clock cycle period of the first clock signal is a second length different from the first length.

11. The semiconductor device according to claim 10 , wherein the initial code control circuit is configured to count a number of pulses of the first clock signal during a predetermined period to determine the initial value of the code information.

12. The semiconductor device according to claim 10 , further comprising:

a plurality of memory cells; and

an output circuit that outputs data stored in the memory cells, the output circuit being configured to output the data in synchronism with the second clock signal.

13. The semiconductor device according to claim 10 , wherein the first value is greater than the second value when the first length is longer than the second length.