Recording media with multiple bi-layers of heatsink layer and amorphous layer for energy assisted magnetic recording system and methods for fabricating the same
View Patent ↗An energy assisted magnetic recording (EAMR) system includes a magnetic recording medium including a plurality of bi-layers and a magnetic recording layer on the plurality of bi-layers, a magnetic transducer configured to write information to the magnetic recording medium, and a light source positioned proximate the magnetic transducer and configured to heat the magnetic recording medium. Each of the plurality of bi-layers includes a heatsink layer and an amorphous under-layer on the heatsink layer.
1. An energy assisted magnetic recording (EAMR) system comprising:
a magnetic recording medium comprising:
a plurality of bi-layers, each of the plurality of bi-layers comprising a heatsink layer and an amorphous under-layer on the heatsink layer; and
a magnetic recording layer on the plurality of bi-layers;
a magnetic transducer configured to write information to the magnetic recording medium; and
a light source positioned proximate the magnetic transducer and configured to heat the magnetic recording medium.
2. The EAMR system of claim 1 , wherein the amorphous under-layer comprises a material selected from the group consisting of CrTi, CrTa, NiTa, CoCrTaZr, CoFeZrBCr, CoTaZr, CoFeTaZr, CoCrWTaZr, CoCrMoTaZr, CoZrWMo, and combinations thereof.
3. The EAMR system of claim 1 , wherein the heatsink layer comprises a material selected from the group consisting of Ru, W, Mo, Cu, Ag, Cr, Al, Cu—Zr, Mo—Cu, Ag—Pd, Cr—Ru, Cr—V, Cr—W, Cr—Mo, Cr—Nd, and combinations thereof.
4. The EAMR system of claim 1 , further comprising a thermal resistance layer between a substrate and the plurality of bi-layers, wherein the thermal resistance layer is configured to facilitate FePt growth.
5. The EAMR system of claim 4 , wherein the thermal resistance layer comprises a single layer of MgO.
6. The EAMR system of claim 1 , wherein the magnetic recording layer comprises a material selected from the group consisting of FePt and CoPt.
7. The EAMR system of claim 1 , wherein the plurality of bi-layers have a same thickness.
8. The EAMR system of claim 1 , wherein the plurality of bi-layers have different thicknesses.
9. The EAMR system of claim 1 , wherein the heatsink layer of a first bi-layer and the heatsink layer of a second bi-layer from among the plurality of bi-layers, have different thicknesses.
10. The EAMR system of claim 1 , wherein the heatsink layer of a first bi-layer and the heatsink layer of a second bi-layer from among the plurality of bi-layers, have a same thickness.
11. The EAMR system of claim 1 , wherein the amorphous under-layer of a first bi-layer and the amorphous under-layer of a second bi-layer from among the plurality of bi-layers, have different thicknesses.
12. The EAMR system of claim 1 , wherein the amorphous under-layer of a first bi-layer and the amorphous under-layer of a second bi-layer from among the plurality of bi-layers, have a same thickness.
13. The EAMR system of claim 1 , wherein the amorphous under-layer and the heatsink layer of a bi-layer of the plurality of bi-layers have a same thickness.
14. The EAMR system of claim 1 , wherein the amorphous under-layer and the heatsink layer of a bi-layer of the plurality of bi-layers have different thicknesses.
15. The EAMR system of claim 1 , wherein each of the amorphous under-layer and the heatsink layer of the plurality of bi-layers, has a thickness between about 10 nm and about 100 nm.
16. The EAMR system of claim 15 ,
wherein the plurality of bi-layers comprises a first bi-layer and a second bi-layer,
wherein the amorphous under-layer of the first bi-layer has a thickness of about 35 nm, and the heatsink layer of the first bi-layer has a thickness of about 15 nm, and
wherein the amorphous under-layer of the second bi-layer has a thickness of about 17.5 nm, and the heatsink layer of the second bi-layer has a thickness of about 32.5 nm.
17. A method for manufacturing an energy assisted magnetic recording (EAMR) system, the method comprising:
forming a magnetic recording medium comprising:
a plurality of bi-layers on a substrate, each of the plurality of bi-layers comprising a heatsink layer and an amorphous under-layer on the heatsink layer; and
a magnetic recording layer on the plurality of bi-layers;
forming a magnetic transducer configured to write information to the magnetic recording medium; and
positioning a light source proximate the magnetic transducer, the light source configured to heat the magnetic recording medium.
18. The method of claim 17 , wherein the amorphous under-layer comprises a material selected from the group consisting of CrTi, CrTa, NiTa, CoCrTaZr, CoFeZrBCr, CoTaZr, CoFeTaZr, CoCrWTaZr, CoCrMoTaZr, CoZrWMo, and combinations thereof.
19. The method of claim 17 , wherein the heatsink layer comprises a material selected from the group consisting of Ru, W, Mo, Cu, Ag, Cr, Al, Cu—Zr, Mo—Cu, Ag—Pd, Cr—Ru, Cr—V, Cr—W, Cr—Mo, Cr—Nd, and combinations thereof.
20. The method of claim 17 , further comprising forming a thermal resistance layer between the magnetic recording layer and the plurality of bi-layers, wherein the thermal resistance layer is configured to facilitate FePt growth.
21. The method of claim 20 , wherein the thermal resistance layer comprises a single layer of MgO.
22. The EAMR system of claim 1 , wherein the amorphous under-layer is directly on the heatsink layer.
23. The method of claim 17 , wherein the amorphous under-layer is directly on the heatsink layer.