Methods for forming optoelectronic devices including heterojunction
View Patent ↗Embodiments generally relate to optoelectronic semiconductor devices such as photovoltaic cells. In one aspect, a method for forming a device includes forming an absorber layer made of gallium arsenide (GaAs) and having one type of doping, and forming an emitter layer made of a different material and having a higher bandgap than the absorber layer. An intermediate layer can be formed between emitter and absorber layers. A heterojunction and p-n junction are formed between the emitter layer and the absorber layer, where the p-n junction is formed at least partially within the different material at a location offset from the heterojunction. A majority of the absorber layer can be outside of a depletion region formed by the p-n junction. The p-n junction causes a voltage to be generated in the cell in response to the cell being exposed to light at a front side.
1. A method for forming an optoelectronic semiconductor device, the method comprising:
forming an intermediate layer on an absorber layer, wherein the absorber layer is made of gallium arsenide (GaAs) and has only one type of doping, the intermediate layer having the same type of doping as the absorber layer; and
forming an emitter layer on the intermediate layer, wherein the emitter layer is located closer than the absorber layer to a back side of the device, the emitter layer being made of a different material than the absorber layer and having a higher bandgap than the absorber layer, wherein the intermediate layer includes the different material of the emitter layer,
wherein a heterojunction is formed between the emitter layer and the absorber layer, and wherein a p-n junction is formed between the emitter layer and the absorber layer at a location offset from the heterojunction, the p-n junction causing a voltage to be generated in the device in response to the device being exposed to light.
2. The method of claim 1 wherein the intermediate layer includes a material gradation from GaAs at a side closer to the absorber layer, to the different material of the emitter layer at a side closer to the emitter layer.
3. The method of claim 1 wherein the optoelectronic semiconductor device is a single carrier transport solar cell.
4. The method of claim 1 wherein the p-n junction is located within two depletion lengths of the heterojunction.
5. The method of claim 1 wherein the material of the emitter layer is Aluminum Gallium Arsenide (AlGaAs).
6. A method for forming a solar cell, the method comprising:
forming an absorber layer made of gallium arsenide (GaAs) and having only one type of doping;
forming an emitter layer made of a different material than the absorber layer and having a higher bandgap than the absorber layer; and
forming an intermediate layer between the absorber layer and the emitter layer, the intermediate layer having the same type of doping as the absorber layer, wherein the intermediate layer includes a material gradation from GaAs at a side closer to the absorber layer, to the different material of the emitter layer at a side closer to the emitter layer,
wherein a heterojunction is formed between the emitter layer and the absorber layer, and wherein a p-n junction is formed between the emitter layer and the absorber layer and at least partially within the different material at a location offset from the heterojunction, the p-n junction causing a voltage to be generated in the cell in response to the cell being exposed to light at a front side of the cell.
7. The method of claim 6 wherein the material of the emitter layer is Aluminum Gallium Arsenide (AlGaAs).
8. The method of claim 6 wherein the intermediate layer includes a material gradation of about 30% Aluminum 70% GaAs to about 100% GaAs, in a direction of the emitter layer to the absorber layer.
9. The method of claim 6 wherein the emitter layer is located closer than the absorber layer to a back side of the device, such that single carrier transport is provided in the device.
10. A method for forming a photovoltaic cell, the method comprising:
forming an absorber layer made of gallium arsenide (GaAs) and having only one type of doping;
forming an emitter layer made of a different material than the absorber layer and having a higher bandgap than the absorber layer;
forming an intermediate layer between the absorber layer and the emitter layer, the intermediate layer having the same type of doping as the absorber layer; and
such that a heterojunction is formed between the emitter layer and the absorber layer and a p-n junction formed between the emitter layer and the absorber layer and at least partially within the different material at a location offset from the heterojunction, wherein a majority of the absorber layer is outside of a depletion region formed by the p-n junction, the p-n junction causing a voltage to be generated in the cell in response to the cell being exposed to light at a front side of the cell.
11. The method of claim 10 wherein the p-n junction is located within two depletion lengths of the heterojunction.
12. The method of claim 10 wherein the material of the emitter layer is Aluminum Gallium Arsenide (AlGaAs).
13. The method of claim 10 wherein the offset of the p-n junction from the heterojunction is provided by an intermediate layer wherein the intermediate layer includes a material gradation from GaAs at a side closer to the absorber layer, to the different material of the emitter layer.
14. The method of claim 10 wherein the emitter layer is located closer than the absorber layer to a back side of the cell, such that single carrier transport is provided in the cell.