Optoelectronic devices including heterojunction and intermediate layer
View Patent ↗Embodiments generally relate to optoelectronic semiconductor devices such as solar cells. In one aspect, a device includes an absorber layer made of gallium arsenide (GaAs) and having only one type of doping. An emitter layer is located closer than the absorber layer to a back side of the device and is made of a different material and having a higher bandgap than the absorber layer. A heterojunction is formed between the emitter layer and the absorber layer, and a p-n junction is formed between the emitter layer and the absorber layer and at least partially within the different material at a location offset from the heterojunction. An intermediate layer is located between the absorber layer and the emitter layer and provides the offset of the p-n junction from the heterojunction, and includes a graded layer and an ungraded back window layer.
1. An optoelectronic semiconductor device comprising:
an absorber layer made of gallium arsenide (GaAs) and having only one type of doping;
an emitter layer located closer than the absorber layer to a back side of the device, the emitter layer made of a different material than the absorber layer and having a higher bandgap than the absorber layer;
a heterojunction formed between the emitter layer and the absorber layer;
a p-n junction formed between the emitter layer and the absorber layer at a location offset from the heterojunction, the p-n junction causing a voltage to be generated in the device in response to the device being exposed to light at a front side of the device; and
an intermediate layer located between the absorber layer and the emitter layer and providing the offset of the p-n junction from the heterojunction, the intermediate layer having the same type of doping as the absorber layer and including the different material,
wherein the intermediate layer includes:
a graded layer having a material gradation from GaAs at a side closer to the absorber layer, to the different material of the emitter layer, and
a back window layer not having the gradation and having an approximately uniform composition of the different material.
2. The optoelectronic semiconductor device of claim 1 wherein the graded layer is located adjacent to the absorber layer, and wherein the back window layer is located between the graded layer and the emitter layer.
3. The optoelectronic semiconductor device of claim 1 wherein the p-n junction is located within two depletion lengths of the heterojunction.
4. The optoelectronic semiconductor device of claim 1 wherein the material of the emitter layer is Aluminum Gallium Arsenide (AlGaAs).
5. The optoelectronic semiconductor device of claim 1 wherein the optoelectronic semiconductor device is a single carrier transport solar cell.
6. The single carrier transport solar cell of claim 5 wherein a majority of the absorber layer is outside of a depletion region formed by the p-n junction.
7. A solar cell comprising:
an absorber layer made of gallium arsenide (GaAs) and having only one type of doping;
an emitter layer made of a different material than the absorber layer and having a higher bandgap than the absorber layer;
an intermediate layer provided between the absorber layer and the emitter layer, the intermediate layer having the same type of doping as the absorber layer, wherein the intermediate layer includes a material gradation from GaAs at a side closer to the absorber layer, to the different material of the emitter layer at a side closer to the emitter layer, wherein the intermediate layer includes:
(a) a graded layer having the gradation, and
(b) a back window layer not having the gradation and having an approximately uniform composition of the different material;
a heterojunction formed between the emitter layer and the absorber layer; and
a p-n junction formed between the emitter layer and the absorber layer and at least partially within the different material at a location offset from the heterojunction, the p-n junction causing a voltage to be generated in the cell in response to the cell being exposed to light at a front side of the cell.
8. The solar cell of claim 7 wherein the graded layer is located adjacent to the absorber layer, and wherein the back window layer is located between the graded layer and the emitter layer.
9. The solar cell of claim 7 wherein the p-n junction is located within two depletion lengths of the heterojunction.
10. The solar cell of claim 7 wherein the material of the emitter layer is Aluminum Gallium Arsenide (AlGaAs).
11. The solar cell of claim 7 wherein the emitter layer is located closer than the absorber layer to a back side of the device, such that single carrier transport is provided in the cell.
12. The solar cell of claim 7 wherein a majority of the absorber layer is outside of a depletion region formed by the p-n junction.