Overvoltage protection method using exposed device supply rail
View Patent ↗A semiconductor device may be protected from over-voltages via a comparator-controlled, high-current FET coupled to the semiconductor device output and between circuit devices that carry high voltages. A three-terminal, N-channel field effect transistor (FET) may have its source coupled to the output of the semiconductor device to be protected from over voltage. The FET drain may be connected to the load to be driven by the semiconductor device. A transistor, or other voltage comparator, may be configured and connected in order to compare the voltage on the FET drain to a V max reference voltage. When a voltage on the FET drain exceeds V max , the comparator output may shut down the FET, thereby isolating the semiconductor device, which is connected to the FET source, from the overvoltage on the FET drain.
1. An overvoltage protection circuit for a vehicle, the circuit comprising:
a circuit board;
a semiconductor device attached to the circuit board and coupled to a supply voltage, the semiconductor having an output, which requires protection from signals applied to said output that have a voltage greater than the supply voltage;
a three-terminal field effect transistor (FET) attached to the circuit board, and configured to provide over-voltage protection to the output of the semiconductor device, the FET having a source, which is coupled to said semiconductor device output, the FET having a drain, the voltage of which is susceptible to being provided a voltage that is greater than the supply voltage and, the FET also having a gate, which is coupled to the supply voltage through a resistor having a first side coupled to the gate and a second side coupled to the supply voltage;
an electrical load, that is away from the circuit board and which is configured to be driven by the semiconductor device;
an electrical conductor, extending between and electrically connecting said drain to said electrical load, at least a portion of the electrical conductor extending through at least a portion of a conduit in the vehicle, said portion of the conduit in the vehicle being away from the circuit board and having therein, the electrical conductor and at least one other conductor having an over-voltage, the over-voltage being a voltage having a magnitude that exceeds the magnitude of said supply voltage and which if connected to the output of the semiconductor device would damage said semiconductor device;
a voltage comparator attached to the circuit board, the voltage comparator, having first and second inputs and an output, the first input being electrically coupled to the electrical conductor, the second input being coupled to the supply voltage, the output being coupled to the second side of the resistor and thereby coupled to the gate, the comparator being configured to generate an output voltage that turns the FET on as long as the first input voltage is less than the supply voltage;
whereby an over-voltage on the electrical conductor provided by said at least one of said other conductors causes the voltage comparator output voltage to shut off the FET and thereby prevent an overvoltage on the electrical conductor from reaching the output of the semiconductor.
2. The circuit of claim 1 , wherein the circuit board comprises a circuit board trace on a surface of the circuit board and additionally comprises a connector for the electrical conductor that extend at least part way through the conduit, the circuit board trace extending between and electrically connecting the drain of the FET to the connector, the electrical conductor being a lead wire that is attached to the connector and which extends therefrom into the portion of the conduit, the first input of the voltage comparator being physically connected to said circuit board trace.
3. The circuit of claim 1 , wherein the load is located off of the circuit board.
4. The circuit of claim 1 , wherein the comparator is an operational amplifier.
5. The circuit of claim 1 , wherein the comparator comprises a differential pair of transistors.
6. The circuit of claim 1 , wherein the comparator is a single transistor, the collector of which is coupled to the gate, the emitter of which is coupled to the supply voltage, and the base of which is coupled to the electrical conductor.
7. The circuit of claim 1 , wherein the FET is an N-channel field effect transistor.
8. The circuit of claim 6 , wherein the transistor is an NPN transistor.