Fabrication method of light-emitting device
View Patent ↗A fabrication method of a light-emitting device comprises providing a growth substrate; forming a protective layer on a first surface of the growth substrate; and forming a first semiconductor layer on a second surface of the growth substrate opposite to the first surface, wherein the coefficient of thermal expansion of the growth substrate is smaller than that of the protective layer and the first semiconductor layer.
1. A fabrication method of a light-emitting device, comprising:
providing a growth substrate;
forming a protective layer on a first surface of the growth substrate; and
forming a first semiconductor layer on a second surface of the growth substrate opposite to the first surface, wherein the coefficient of thermal expansion of the growth substrate is smaller than that of the protective layer and the first semiconductor layer, wherein the thickness of the growth substrate is larger than the thickness of the protective layer and the thickness of the first semiconductor layer; forming a second semiconductor layer on the first semiconductor layer, and a light-emitting layer between the first semiconductor layer and the second semiconductor layer to form a semiconductor stack, wherein an electrical conductivity type of the first semiconductor layer is different from that of the second semiconductor layer; and removing the growth substrate from the semiconductor stack.
2. The fabrication method according to claim 1 , further comprising forming a buffer layer between the growth substrate and the first semiconductor layer.
3. The fabrication method according to claim 1 , further comprising forming a bonding layer on the semiconductor stack.
4. The fabrication method according to claim 3 , further comprising forming a support substrate on the bonding layer.
5. The fabrication method according to claim 4 , wherein the material of the support substrate is a conductive substrate.
6. The fabrication method according to claim 5 , wherein the conductive substrate comprises semiconductor material or metal material.
7. The fabrication method according to claim 5 , further comprising forming a first electrode and a second electrode on different sides of the semiconductor stack respectively.
8. The fabrication method according to claim 4 , wherein the material of the support substrate is a non-conductive substrate.
9. The fabrication method according to claim 8 , wherein the non-conductive substrate comprises AN or non-doped silicon.
10. The fabrication method according to claim 8 , further comprising forming a first electrode and a second electrode both on the same side of the semiconductor stack.
11. The fabrication method according to claim 1 , wherein the growth substrate comprises silicon material.
12. The fabrication method according to claim 2 , wherein the material of the buffer layer comprises semiconductor material.
13. The fabrication method according to claim 1 , wherein the material of the protective layer comprises dielectric material, semiconductor material or metal material.
14. The fabrication method according to claim 1 , wherein the coefficient of thermal expansion of the protective layer is larger than that of the first semiconductor layer.
15. The fabrication method according to claim 1 , wherein the thickness of the protective layer is smaller than or approximately the same as that of the semiconductor stack.
16. The fabrication method according to claim 1 , wherein the semiconductor stack is epitaxially grown on the growth substrate.