Method for manufacturing optoelectronic devices

1. A method for manufacturing optoelectronic devices comprising the steps of:

providing a common growth substrate;

forming a light-emitting epitaxy structure on the common growth substrate;

forming a stripping layer on the light-emitting epitaxy structure;

forming a solar cell epitaxy structure on the stripping layer;

forming an adhesive layer on the solar cell epitaxy structure;

providing a solar cell permanent substrate on the adhesive layer; and

removing the stripping layer to form a light-emitting device and a solar cell device separately.

2. The method according to claim 1 , wherein forming the light-emitting epitaxy structure, the stripping layer, and the solar cell epitaxy structure comprising the methods of: metal organic chemical vapor deposition, liquid phase deposition, or molecular beam epitaxy.

3. The method according to claim 1 , wherein a material of the common growth substrate comprises GaAs or Ge.

4. The method according to claim 1 , wherein a material of the stripping layer comprises AlAs or AlGaAs.

5. The method according to claim 1 , wherein a material of the adhesive layer comprises metal, silver glue, conductive polymer, polymer materials mixed with conductive materials, or anisotropic conductive film.

6. The method according to claim 1 , wherein a material of the solar cell permanent substrate comprises germanium, copper, aluminum, molybdenum, tungsten copper, silicon aluminum, gallium arsenide, indium phosphide, silicon carbide, silicon, gallium nitride, aluminum nitride or diamond-like carbon.

7. The method according to claim 1 , wherein removing the stripping layer comprises wet etching solution containing hydrofluoric acid or citric acid.

8. The method according to claim 1 , wherein forming the light-emitting device further comprising the steps of:

forming a transparent conductive layer on the light-emitting epitaxy structure;

forming a first electrode on the transparent conductive layer;

forming a second electrode under the common growth substrate opposite to the light-emitting epitaxy structure; and

dicing the transparent conductive layer, the light-emitting epitaxy structure, the common growth substrate and the second electrode along a cutting line.

9. The method according to claim 1 , wherein forming the solar cell device further comprising the steps of:

forming an anti-reflective layer on a portion of the solar cell epitaxy structure;

forming a first electrode on the remained portion of the solar cell epitaxy structure;

forming a second electrode under the solar cell permanent substrate opposite to the adhesive layer; and

dicing the anti-reflective layer, the solar cell epitaxy structure, the adhesive layer, the solar cell permanent substrate and the second electrode along a cutting line.

10. A method for manufacturing optoelectronic devices comprising the steps of:

providing a common growth substrate;

forming a solar cell epitaxy structure on the common growth substrate;

forming a stripping layer on the solar cell epitaxy structure;

forming a light-emitting epitaxy structure on the stripping layer;

forming an adhesive layer on the light-emitting epitaxy structure;

providing a light-emitting device permanent substrate on the adhesive layer; and

removing the stripping layer to form a light-emitting device and a solar cell device separately.

11. The method according to claim 10 , wherein forming the light-emitting epitaxy structure, the stripping layer, and the solar cell epitaxy structure comprising the methods of: metal organic chemical vapor deposition, liquid phase deposition, or molecular beam epitaxy.

12. The method according to claim 10 , wherein a material of the common growth substrate comprises GaAs or Ge.

13. The method according to claim 10 , wherein a material of the stripping layer comprises AlAs or AlGaAs.

14. The method according to claim 10 , wherein a material of the adhesive layer comprises metal, silver glue, conductive polymer, polymer materials mixed with conductive materials, or anisotropic conductive film.

15. The method according to claim 10 , wherein a material of the solar cell permanent substrate comprises germanium, copper, aluminum, molybdenum, tungsten copper, silicon aluminum, gallium arsenide, indium phosphide, silicon carbide, silicon, gallium nitride, aluminum nitride or diamond-like carbon.

16. The method according to claim 10 , wherein removing the stripping layer comprises wet etching solution containing hydrofluoric acid or citric acid.

17. The method according to claim 10 , wherein forming the light-emitting device further comprising the steps of:

forming a transparent conductive layer on the light-emitting epitaxy structure;

forming a first electrode on the transparent conductive layer;

forming a second electrode under the light-emitting device permanent substrate opposite to the adhesive layer; and

dicing the transparent conductive layer, the light-emitting epitaxy structure, the adhesive layer, the light-emitting device permanent substrate and the second electrode along a cutting line.

18. The method according to claim 10 , wherein forming the solar cell device further comprising the steps of:

forming an anti-reflective layer on a portion of the solar cell epitaxy structure;

forming a first electrode on the remained portion of the solar cell epitaxy structure;

forming a second electrode under the common growth substrate opposite to the solar cell epitaxy structure; and

dicing the anti-reflective layer, the solar cell epitaxy structure, the common growth substrate and the second electrode along a cutting line.