Light-emitting device
View Patent ↗A light-emitting device includes a support substrate; a light-emitting stacked layer; transparent-conductive bonding layer; and a semiconductor contact layer. The light-emitting stacked layer includes a first semiconductor layer; an active layer; and a second semiconductor layer, wherein a polarity of the first semiconductor layer is different from that of the semiconductor layer. A first pad is formed on an exposed portion of the first semiconductor layer and a second pad is formed on the semiconductor contact layer. A polarity of the semiconductor contact layer is different from that of the second semiconductor layer.
1. A light-emitting device, comprising:
a support substrate; a plurality of light-emitting units on the support substrate, wherein each of the plurality of light-emitting units comprises:
a light-emitting stacked layer comprising an active layer;
a first semiconductor layer between the support substrate and the active layer; and
a second semiconductor layer on the active layer;
a transparent-conductive bonding layer on the light-emitting stacked layer; and
a semiconductor contact layer connecting two of the light-emitting units through the transparent-conductive bonding layer, wherein the semiconductor contact layer contacts and electrically connects the transparent-conductive bonding layers;
wherein the transparent-conductive bonding layer is between the semiconductor contact layer and the second semiconductor layer.
2. The light-emitting device of claim 1 , wherein a polarity of the semiconductor contact layer is different from that of the second semiconductor layer.
3. The light-emitting device of 1 , wherein a polarity of the semiconductor contact layer is the same as that of the second semiconductor layer.
4. The light-emitting device of claim 1 , wherein a sheet resistance of the semiconductor contact layer is less than that of the second semiconductor layer.
5. The light-emitting device of claim 1 , wherein top surfaces of the transparent-conductive bonding layers are at the same elevation.
6. The light-emitting device of claim 1 , further comprising a groove between the two of the light-emitting units that are adjacent each other.
7. The light-emitting device of claim 6 , wherein the groove is filled with an insulating material.
8. The light-emitting device of claim 7 , wherein the insulating material is selected from a group consisting of diamond, glass, polymer, epoxy, quartz, acryl, Al 2 O 3 , ZnO, or AlN.
9. The light-emitting device of claim 1 , wherein a material of the transparent-conductive bonding layer is selected from a group consisting of ITO, InO, SnO, CTO, ATO, AZO, ZTO, ZnO, IZO, YZO, GZO, and DLC.
10. The light-emitting device of claim 1 , wherein the transparent-conductive bonding layer covers a lateral surface of the light-emitting unit.
11. The light-emitting device of claim 1 , wherein a semiconductor material of the semiconductor contact layer comprises more than one element selected from a group consisting of Ga, Al, In, As, P, N, Zn, Cd, and Se.
12. A light-emitting device, comprising:
a substrate
a light-emitting stacked layer comprising:
a first semiconductor layer on the substrate; an active layer on the first semiconductor layer; and
a second semiconductor layer on the active layer; a transparent-conductive bonding layer on the second semiconductor layer; a semiconductor contact layer on the transparent-conductive bonding layer, wherein a sheet resistance of the semiconductor contact layer is less than that of the second semiconductor layer; a first pad on the first semiconductor layer; and a second pad on the semiconductor contact layer;
wherein the semiconductor contact layer is a single layer, a polarity of the semiconductor contact layer is different from that of the second semiconductor layer and the same as that of the first semiconductor layer.
13. The light-emitting device of claim 12 , wherein a semiconductor material of the semiconductor contact layer comprises more than one element selected from a group consisting of Ga, Al, In, As, P, N, Zn, Cd, and Se.
14. The light-emitting device of claim 12 , wherein the polarity of the semiconductor contact layer is n type.
15. The light-emitting device of claim 12 , wherein the polarity of the semiconductor contact layer is p type.
16. The light-emitting device of claim 1 , wherein the plurality of light-emitting units are electrically connected in series.
17. The light-emitting device of claim 1 , wherein a top surface of one of the light-emitting units and a top surface of another one of the light-emitting units are in a plane, and the transparent-conductive layer is on the plane and between the plane and the semiconductor contact layer.