System and Method for Cleaning Semiconductor Fabrication Equipment Parts
An exemplary embodiment discloses a process for cleaning semiconductor fabrication equipment parts with non-metallic surfaces. The process optionally includes providing a semiconductor fabrication part with a non-metallic surface to be cleaned and applying a dilute aqueous solution to remove contamination from the non-metallic surface. The aqueous solution optionally includes dilute amounts of hydrofluoric acid, nitric acid and hydrogen peroxide. The dilute amounts would optionally be in the ranges of 0.5-1.5% wt. hydrofluoric acid, 0.1-0.5% wt. nitric acid and 1-10% wt. hydrogen peroxide.
1 . A method for reducing sub-surface damage to a part comprising:
determining how deep is the sub-surface damage beneath a surface of a part;
chemically etching said surface of said part; and
stopping said chemical etching of said surface at about said depth of said sub-surface damage.
2 . A method for cleaning a part comprising:
performing an ultrasonication cleaning process to a surface of a part to be cleaned;
spray rinsing said part with a dilute chemical mixture; and
spray rinsing said part with deionized water.
3 . A method for cleaning a part as recited in claim 2 further comprising repeating said spray rinsing of said part with a dilute chemical mixture and spray rinsing said part with deionized water based upon the specification of purity for said part.
4 . A method for determining contamination of an openable part having inner surfaces comprising:
introducing a part into a controlled clean environment of at least class 1000 ;
opening said part in said controlled clean environment; and
running contamination analysis on said inner surfaces of said part.
5 . A method for determining contamination as recited in claim 4 where running contamination analysis includes applying a known volume of ultra pure water to a cavity of a part, extracting said water, and analyzing contaminants found in said water.
6 . A method for determining contamination as recited in claim 4 where running a contamination analysis includes applying a known volume of a high purity extraction solution to a cavity of a part, extracting said extraction solution, and analyzing contaminants found in said extraction solution.