IP Library Granted Patent US 8,497,481
Granted Patent B2
US 8,497,481 · App. 13/458,068 · Granted Jul 30, 2013

Radiation detector and method for manufacturing same

Inventors: Yuichi Shinba (Otawara, JP); Katsuhisa Homma (Otawara, JP)
Assignees: Kabushiki Kaisha Toshiba; Toshiba Electron Tubes & Devices Co., Ltd.
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Quick Facts
Patent No.
US 8,497,481
App. No.
13/458,068
Granted
Jul 30, 2013
Kind
B2
Abstract

According to one embodiment, a radiation detector comprises an array substrate having thereon a photoelectric conversion element for converting fluorescence into an electrical signal and having the outermost layer covered with a protective film, a scintillator layer provided on the protective film and converting incident radiation into fluorescence, and a reflective layer filmed by coating and drying paste-like material containing light-scattering particles and a binder provided on the scintillator layer, wherein the protective film is made of a thermoplastic resin having a softening point not higher than the film formation temperature of the scintillator layer and extending on the array substrate over an area of the reflective layer.

Claims (30)

1. A radiation detector comprising an array substrate having a photoelectric conversion element for converting fluorescence into an electrical signal and having a protective film covering the photoelectric conversion element, a scintillator layer provided by direct deposition on the protective film and converting incident radiation into fluorescence, and a reflective layer formed by coating and drying paste-like material containing light-scattering particles and a binder provided on the scintillator layer and reflecting the fluorescence from the scintillator layer towards the array substrate,

wherein the protective film is on top of the array substrate, forming a surface in a soft state at the time of the deposition and, made of a thermoplastic resin having a softening point not higher than the film formation temperature of the scintillator layer and extending on the array substrate over an area of the reflective layer.

2. The radiation detector according to claim 1 , wherein the scintillator layer is made of an alkali halide compound having a pillar structure, and the softening point of the protective film is lower than 200° C.

3. The radiation detector according to claim 2 , wherein the protective film contains as a main component an element that does not generate high-boiling oxide.

4. The radiation detector according to claim 3 , wherein the protective film is an acrylic-based organic resin material.

5. The radiation detector according to claim 1 , wherein the protective film contains as a main component an element that does not generate high-boiling oxide.

6. The radiation detector according to claim 5 , wherein the protective film is an acrylic-based organic resin material.

7. The radiation detector according to claim 1 , wherein the surface is flat.

8. A method for manufacturing a radiation detector comprising the steps of:

forming a protective film made of a thermoplastic resin on the outermost layer of an array substrate having thereon a photoelectric conversion element for converting fluorescence into an electrical signal;

forming, on the protective film in a soft state, a scintillator layer converting radiation into fluorescence by vacuum deposition at a temperature higher than the softening point of the thermoplastic resin; and

forming a reflective layer on the scintillator layer by film coating.

9. The method according to claim 8 , comprising a step of applying UV/O 3 treatment or plasma treatment of gas containing oxygen to the protective film, between the step of forming a protective film and the step of forming a scintillator layer.

10. The method according to claim 9 , wherein,

in the step of forming the scintillator layer by a vacuum deposition method, the substrate temperature at the time of formation of the scintillator layer is set to 200° C. or lower.

11. The method according to claim 8 , wherein,

in the step of forming a scintillator layer by a vacuum deposition method, the substrate temperature at the time of formation of the scintillator layer is set to 200° C. or lower.

12. A radiation detector formation method, comprising:

forming an array substrate having a photoelectric conversion element for converting fluorescence into an electrical signal and a protective film covering the photoelectric conversion element;

forming a scintillator layer by direct deposition on the protective film, wherein the scintillator layer is configured to convert incident radiation into fluorescence;

forming a reflective layer by coating and drying paste-like material containing light-scattering particles and a binder on the scintillator layer,

wherein the reflective layer is configured to reflect the fluorescence from the scintillator layer towards the array substrate, and

wherein the protective film is made of a thermoplastic resin having a softening point not higher than the film formation temperature of the scintillator layer and extending on the array substrate over an area of the reflective layer.

13. The radiation detector formation method according to claim 12 , wherein the scintillator layer is made of an alkali halide compound having a pillar structure, and the softening point of the protective film is lower than 200° C.

14. The radiation detector formation method according to claim 13 , wherein the protective film contains as a main component an element that does not generate high-boiling oxide.

15. The radiation detector formation method according to claim 14 , wherein the protective film is an acrylic-based organic resin material.

16. The radiation detector formation method according to claim 12 , wherein the protective film contains as a main component an element that does not generate high-boiling oxide.

17. The radiation detector formation method according to claim 16 , wherein the protective film is an acrylic-based organic resin material.

18. The radiation detector formation method according to claim 12 , wherein the protective film is formed on top of the array substrate, forming a surface in a soft state at the time of the deposition.

19. The radiation detector formation method according to claim 18 , wherein the surface is flat.

Assignments (3)
CHANGE OF NAME Recorded Dec 7, 2018
From: TOSHIBA ELECTRON TUBES & DEVICES CO., LTD.
To: CANON ELECTRON TUBES & DEVICES CO., LTD.
Reel/Frame 047701/0768 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 2, 2016
From: KABUSHIKI KAISHA TOSHIBA
To: TOSHIBA ELECTRON TUBES & DEVICES CO., LTD.
Reel/Frame 038773/0680 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 11, 2012
From: SHINBA, YUICHI; HOMMA, KATSUHISA
To: KABUSHIKI KAISHA TOSHIBA; TOSHIBA ELECTRON TUBES & DEVICES CO., LTD.
Reel/Frame 028527/0108 →
Priority Claims (1)
JP 2009-288077 · Dec 18, 2009 · national
Continuity (2)
Continuation PCTJP2010007264 · Dec 15, 2010
Related Publication 20120267539A1 · Oct 25, 2012