IP Library Granted Patent US 9,046,546
Granted Patent B2
US 9,046,546 · App. 13/458,537 · Granted Jun 2, 2015

Sensor device and related fabrication methods

Inventor: Yizhen Lin (Niskayuna, NY)
Assignee: FREESCALE SEMICONDUCTOR INC.
G01P15/0802Y10T29/49826G01P15/125G01L9/0042G01L9/0047G01L9/0073G01L13/025G01L15/00G01L19/0092G01L9/125
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Quick Facts
Patent No.
US 9,046,546
App. No.
13/458,537
Granted
Jun 2, 2015
Kind
B2
Abstract

Apparatus and related fabrication methods are provided for a sensor device. An exemplary sensor device includes a first structure including a first sensing arrangement and a second sensing arrangement formed therein and a second structure affixed to the first structure. The second structure includes a cavity aligned with the first sensing arrangement to provide a first reference pressure on a first side of the first sensing arrangement and an opening aligned with the second sensing arrangement to expose the first side of the second sensing arrangement to an ambient pressure.

Claims (44)

1. A sensor device comprising:

a first structure including a first sensing arrangement and a second sensing arrangement formed therein;

a second structure affixed to the first structure, wherein the second structure includes:

a cavity aligned with the first sensing arrangement to provide a first reference pressure on a first side of the first sensing arrangement; and

an opening aligned with the second sensing arrangement to expose the first side of the second sensing arrangement to an ambient pressure; and

a third structure coupled to a second side of the first structure to provide a sealed chamber adjacent to the second side of the first sensing arrangement and the second side of the second sensing arrangement, the sealed chamber providing a second reference pressure on the second side of the first sensing arrangement and the second reference pressure on the second side of the second sensing arrangement, wherein the first reference pressure and the second reference pressure are different.

2. The sensor device of claim 1 , wherein:

the first sensing arrangement includes a first diaphragm region to deflect in response to a difference between the first reference pressure and the second reference pressure; and

the second sensing arrangement includes a second diaphragm region to deflect in response to a difference between the ambient pressure and the second reference pressure.

3. The sensor device of claim 1 , further comprising a third sensing arrangement formed in the first structure, wherein:

the third structure provides the sealed chamber adjacent to the second side of the third sensing arrangement.

4. The sensor device of claim 1 , further comprising a molding compound encapsulating the third structure.

5. The sensor device of claim 1 , further comprising a third sensing arrangement formed in the first structure.

6. The sensor device of claim 5 , wherein the third sensing arrangement comprises an inertial sensing arrangement.

7. The sensor device of claim 1 , wherein:

the first sensing arrangement comprises a first pressure sensing arrangement; and

the second sensing arrangement comprises a second pressure sensing arrangement.

8. The sensor device of claim 7 , wherein:

the first reference pressure is at vacuum; and

the second reference pressure on the second side of the first sensing arrangement and the second side of the second sensing arrangement is at partial vacuum.

9. The sensor device of claim 1 , wherein:

the first sensing arrangement comprises a first pressure sensing arrangement; and

the second sensing arrangement comprises a second pressure sensing arrangement.

10. The sensor device of claim 9 , the first pressure sensing arrangement including a first diaphragm region and the second pressure sensing arrangement including a second diaphragm region, deflection of the first diaphragm region being influenced by the first reference pressure, wherein deflection of the second diaphragm region is influenced by the ambient pressure and independent of the first reference pressure.

11. The sensor device of claim 10 , further comprising control circuitry to determine a pressure metric indicative of the ambient pressure based on a relationship between a first electrical signal from the first sensing arrangement and a second electrical signal from the second sensing arrangement, wherein the first electrical signal is influenced by the deflection of the first diaphragm region and the second electrical signal is influenced by the deflection of the second diaphragm region.

12. The sensor device of claim 1 , wherein:

the first sensing arrangement includes a first diaphragm region;

the second sensing arrangement includes a second diaphragm region exposed to an ambient pressure;

the cavity comprises a second sealed chamber adjacent to a first side of the first sensing arrangement, the second sealed chamber having the first reference pressure, wherein first diaphragm region deflects in response to a difference between the first reference pressure and the second reference pressure and the second diaphragm region deflects in response to a difference between the ambient pressure and the second reference pressure.

13. The sensor device of claim 12 , further comprising an integrated circuit die having control circuitry formed thereon, the control circuitry being coupled to the sensor device to determine a pressure metric indicative of the ambient pressure based on a relationship between a first electrical signal from the first sensing arrangement and a second electrical signal from the second sensing arrangement, wherein the first electrical signal is influenced by the deflection of the first diaphragm region and the second electrical signal is influenced by the deflection of the second diaphragm region.

14. The sensor device of claim 13 , further comprising a package substrate structure having the sensor device and the integrated circuit die affixed thereto, wherein the package substrate structure includes a second opening aligned with the second sensing arrangement to expose the second diaphragm region to the ambient pressure.

15. The sensor device of claim 12 , further comprising:

an inertial sensing arrangement; and

a substrate of semiconductor material having the first sensing arrangement, the second sensing arrangement, and the inertial sensing arrangement formed therein, wherein the sealed chamber encompasses a side of the inertial sensing arrangement.

16. A method of fabricating the sensor device of claim 1 , the method comprising:

forming the second structure having the cavity;

affixing the second structure to the first side of the first structure at the first reference pressure, the cavity providing a second sealed chamber at the first reference pressure adjacent to the first side of the first sensing arrangement of the first structure in response to affixing the first structure to the second structure;

forming the opening in the second structure, the opening being aligned with the second sensing arrangement of the first structure to expose the first side of the second sensing arrangement to the ambient pressure; and

affixing the third structure to the second side of the first structure at the second reference pressure, the third structure being configured to provide the sealed chamber at the second reference pressure adjacent to the second side of the first sensing arrangement and the second sensing arrangement in response to affixing the third structure to the first structure.

17. The method of claim 16 , further comprising:

forming a first diaphragm region for the first sensing arrangement on the first structure, the first side of the first diaphragm region being adjacent to the second sealed chamber when the second structure is affixed to the first structure;

forming a second diaphragm region for the second sensing arrangement on the first structure, the opening in the second structure being aligned with the second diaphragm region to expose the first side of the second diaphragm region to the ambient pressure; and

forming openings in the first structure to expose the second side of the first diaphragm region and the second side of the second diaphragm region to the second reference pressure.

18. The method of claim 17 , further comprising forming a third sensing arrangement in the first structure, wherein the third sensing arrangement is at the second reference pressure when the third structure is affixed to the first structure.

Assignments (32)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 12, 2026
From: NXP USA, INC.
To: STMICROELECTRONICS INTERNATIONAL N.V.
Reel/Frame 075045/0168 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040925 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Feb 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V. F/K/A FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 052917/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040928 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Jan 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 052915/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 037486 FRAME 0517. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS. Recorded Dec 10, 2019
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 053547/0421 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12298143 PREVIOUSLY RECORDED ON REEL 042985 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Oct 22, 2019
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 051029/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12298143 PREVIOUSLY RECORDED ON REEL 042762 FRAME 0145. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Oct 22, 2019
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 051145/0184 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12298143 PREVIOUSLY RECORDED ON REEL 038017 FRAME 0058. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Oct 22, 2019
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 051030/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12298143 PREVIOUSLY RECORDED ON REEL 039361 FRAME 0212. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Oct 22, 2019
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 051029/0387 →
RELEASE OF SECURITY INTEREST Recorded Sep 10, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 050744/0097 →
RELEASE OF SECURITY INTEREST Recorded Sep 10, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 050745/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE TO CORRECT THE APPLICATION NO. FROM 13,883,290 TO 13,833,290 PREVIOUSLY RECORDED ON REEL 041703 FRAME 0536. ASSIGNOR(S) HEREBY CONFIRMS THE THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS.. Recorded Feb 20, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: SHENZHEN XINGUODU TECHNOLOGY CO., LTD.
Reel/Frame 048734/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12681366 PREVIOUSLY RECORDED ON REEL 039361 FRAME 0212. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded May 9, 2017
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 042762/0145 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12681366 PREVIOUSLY RECORDED ON REEL 038017 FRAME 0058. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded May 9, 2017
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 042985/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE PATENTS 8108266 AND 8062324 AND REPLACE THEM WITH 6108266 AND 8060324 PREVIOUSLY RECORDED ON REEL 037518 FRAME 0292. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS. Recorded Feb 1, 2017
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 041703/0536 →
CORRECTIVE ASSIGNMENT TO CORRECT THE NATURE OF CONVEYANCE PREVIOUSLY RECORDED AT REEL: 040652 FRAME: 0241. ASSIGNOR(S) HEREBY CONFIRMS THE MERGER AND CHANGE OF NAME. Recorded Jan 5, 2017
From: FREESCALE SEMICONDUCTOR, INC.
To: NXP USA, INC.
Reel/Frame 041260/0850 →
MERGER Recorded Nov 8, 2016
From: FREESCALE SEMICONDUCTOR, INC.
To: NXP USA, INC.
Reel/Frame 040652/0241 →
RELEASE OF SECURITY INTEREST Recorded Nov 7, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 040928/0001 →
RELEASE OF SECURITY INTEREST Recorded Sep 21, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V., F/K/A FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 040925/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12092129 PREVIOUSLY RECORDED ON REEL 038017 FRAME 0058. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Jul 14, 2016
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 039361/0212 →
SUPPLEMENT TO THE SECURITY AGREEMENT Recorded Jun 16, 2016
From: FREESCALE SEMICONDUCTOR, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 039138/0001 →
SECURITY AGREEMENT SUPPLEMENT Recorded Mar 7, 2016
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 038017/0058 →
ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS Recorded Jan 13, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 037518/0292 →
ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS Recorded Jan 12, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 037486/0517 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037357/0535 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037357/0555 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037357/0575 →
SECURITY AGREEMENT Recorded Nov 6, 2013
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 031591/0266 →
SECURITY AGREEMENT Recorded Jun 18, 2013
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 030633/0424 →
SUPPLEMENT TO IP SECURITY AGREEMENT Recorded Apr 22, 2013
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 030258/0479 →
SUPPLEMENT TO IP SECURITY AGREEMENT Recorded Apr 22, 2013
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 030258/0501 →
SUPPLEMENT TO IP SECURITY AGREEMENT Recorded Apr 20, 2013
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS COLLATERAL AGENT
Reel/Frame 030256/0706 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 30, 2012
From: LIN, YIZHEN
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 028127/0772 →
Continuity (1)
Related Publication 20130283912A1 · Oct 31, 2013