Semiconductor device and method of manufacturing the same

1. A method of manufacturing a semiconductor device, the method comprising:

forming a first insulation layer on or over a semiconductor substrate;

depositing a metal layer on or over the first insulation layer and patterning the metal layer to form metal patterns;

forming a second insulation layer on or over the first insulation layer and the metal patterns;

depositing and patterning an anti-reflection layer on or over the second insulation layer;

forming a third insulation layer on or over the anti-reflection layer; and

forming a thin film resistor layer on or over the third insulation layer and patterning the thin film resistor layer to form a thin film resistor pattern, wherein the patterned anti-reflection layer corresponds to a periphery of the thin film resistor pattern.

2. The method according to claim 1 , wherein depositing and patterning the anti-reflection layer comprises depositing an anti-reflection material on the second insulation layer and patterning the anti-reflection material.

3. The method according to claim 1 , wherein the anti-reflection layer has a width that is greater than a width of the thin film resistor pattern.

4. The method according to claim 1 , wherein the anti-reflection layer directly underlies and has a larger area than the thin film resistor pattern.

5. The method according to claim 1 , wherein patterning the anti-reflection layer comprises patterning the anti-reflection material to form a plurality of antireflection patterns, each corresponding to one of the metal patterns.

6. The method according to claim 5 , wherein each of the plurality of antireflection layer patterns has a greater width that a width of the corresponding metal pattern.

7. The method according to claim 5 , wherein each of the plurality of antireflection patterns directly overlies and completely covers the corresponding metal pattern.

8. The method according to claim 1 , wherein forming the first insulation layer comprises forming a plurality of insulation layers.

9. The method according to claim 8 , wherein forming the first insulation layer comprises forming an oxide layer by chemical vapor deposition of a silicon source and an oxygen source.

10. The method according to claim 9 , wherein the silicon source comprises tetraethyl-orthosilicate or a silane, and the oxygen source comprises oxygen and/or ozone.

11. The method according to claim 1 , wherein depositing the metal layer comprises depositing an aluminum material on a Ti/TiN bilayer.

12. The method according to claim 1 , wherein patterning the metal layer comprises forming a first photoresist pattern on the metal layer.

13. The method according to claim 11 , wherein patterning the metal layer further comprises photolithographic and etching processes.

14. The method according to claim 1 , wherein adjacent metal patterns are at regular intervals or have a consistent spacing therebetween.

15. The method according to claim 1 , the anti-reflection layer comprises SiON.

16. The method according to claim 15 , wherein depositing the anti-reflection layer comprises a chemical vapor deposition process using SiH 4 and N 2 O.

17. The method according to claim 1 , wherein the anti-reflection layer has a thickness of 50-500 Å.

18. The method according to claim 1 , wherein the third insulation layer has a thickness of 1000-5000 Å.

19. The method according to claim 1 , wherein forming thin film resistor pattern comprises forming a second photoresist pattern on or over the thin film resistor layer.

20. The method according to claim 19 , wherein forming thin film resistor pattern comprises etching the thin film resistor layer using the second photoresist pattern as a mask.