Cascode circuit device with improved reverse recovery characteristic
A semiconductor device including: an FET; a MOSFET having a drain thereof connected with a source of the FET; a resistor having one end thereof connected with a gate of the FET and having the other end thereof connected with a source of the MOSFET; and a diode having an anode thereof connected with the gate of the FET and having a cathode thereof connected with the source of the MOSFET.
1. A semiconductor device comprising:
a first field-effect transistor being of a normally-on type;
a second field-effect transistor being of a normally-off type and having a drain thereof connected with a source of the first field-effect transistor;
a resistor having one end thereof connected with a gate of the first field-effect transistor and having the other end thereof connected with a source of the second field-effect transistor;
a diode having an anode thereof connected with the gate of the first field-effect transistor; and
a capacitor having one end thereof connected with a drain of the first field-effect transistor and having the other end thereof connected with a cathode of the diode,
wherein the diode and the capacitor are directly connected in series with each other.
2. The semiconductor device as set forth in claim 1 , wherein the first field-effect transistor contains a group III nitride semiconductor.
3. The semiconductor device as set forth in claim 1 , wherein the resistor is fabricated on a chip of a semiconductor.
4. An electronic device comprising a semiconductor device,
the semiconductor device including:
a first field-effect transistor being of a normally-on type;
a second field-effect transistor being of a normally-off type and having a drain thereof connected with a source of the first field-effect transistor;
a resistor having one end thereof connected with a gate of the first field-effect transistor and having the other end thereof connected with a source of the second field-effect transistor;
a diode having an anode thereof connected with the gate of the first field-effect transistor; and
a capacitor having one end thereof connected with a drain of the first field-effect transistor and having the other end thereof connected with a cathode of the diode,
wherein the diode and the capacitor are directly connected in series with each other.