Formation of Selenide, Sulfide or Mixed Selenide-Sulfide Films on Metal or Metal Coated Substrates
A method of forming a metal-coated substrate having a CuInGaR 2 film on a surface of the metal coating is performed in such a manner that reaction of the metal with Se is substantially prevented, wherein R is Se or a combination of Se and S and wherein the metal is selected from the group consisting of Mo, W, Cr, Ta, Nb, V and Ti. The method includes the steps of: providing a precursor film on the surface of the metal coating, wherein the metal coating contains oxygen in an amount sufficient to inhibit reaction of the metal with Se; and selenizing the precursor film; wherein said selenizing is limited to providing only that amount of Se required to form the CuInGaR 2 film.
1 - 7 . (canceled)
8 . A method of forming a metal-coated substrate having a CuInGaR 2 film on a surface of the metal coating in such a manner that reaction of the metal with Se is substantially prevented, wherein R is Se or a combination of Se and S and wherein the metal is selected from the group consisting of Mo, W, Cr, Ta, Nb, V and Ti, comprising the steps of:
providing a precursor film on the surface of the metal coating, wherein the metal coating contains oxygen in an amount sufficient to inhibit reaction of the metal with Se; and
selenizing the precursor film;
wherein said selenizing is limited to providing only that amount of Se required to form the CuInGaR 2 film.
9 . The method according to claim 8 wherein the substrate is a polymeric film.
10 . The method according to claim 8 wherein the substrate is a metal substrate.
11 . The method according to claim 8 wherein the substrate is a glass substrate.
12 . The method according to claim 8 wherein the metal is Mo.
13 . The method according to claim 12 wherein the amount of oxygen is 6-8 atomic percent.
14 . The method according to claim 8 wherein the metal is selected from the group consisting of W, Cr, Ta, Nb, V and Ti.