Methods for characterizing relative film density using spectroscopic analysis at the device level
View Patent ↗Methods for characterizing relative film density using spectroscopic analysis at the device level are provided. One such method includes obtaining a composition of materials at preselected areas of a workpiece using energy dispersive X-ray spectroscopy, obtaining an electron energy loss spectrum-imaging data at each of the preselected areas using electron energy loss spectroscopy, removing, for each of the preselected areas, a preselected noise component of the electron energy spectrum-imaging data to form a plasmon energy spectrum-imaging data, generating, for each of the preselected areas, a plasmon energy map based on the respective plasmon energy spectrum-imaging data, determining, for each of the preselected areas, an average plasmon energy value from the respective plasmon energy map, and calculating a relative mass density of the preselected areas based on the average plasmon energy value, a number of valence electrons per molecule, and a molecular weight for each of the preselected areas.
1. A method for characterizing relative film density at a device level, the method comprising:
obtaining a composition of materials at a plurality of preselected areas of a workpiece using energy dispersive X-ray spectroscopy;
determining, by a processor, a molecular weight and a number of valence electrons per molecule for each of the plurality of preselected areas based on the composition of materials;
obtaining an electron energy loss spectrum-imaging data at each of the plurality of preselected areas using electron energy loss spectroscopy;
removing, by the processor and for each of the plurality of preselected areas, a preselected noise component of the electron energy loss spectrum-imaging data to form a plasmon energy spectrum-imaging data;
generating, by the processor and for each of the plurality of preselected areas, a plasmon energy map based on the respective plasmon energy spectrum-imaging data;
determining, by the processor and for each of the plurality of preselected areas, an average plasmon energy value from the respective plasmon energy map; and
calculating, by the processor, a relative mass density of the plurality of preselected areas based on the average plasmon energy value, the number of valence electrons per molecule, and the molecular weight for each of the plurality of preselected areas.
2. The method of claim 1 , wherein one of the plurality of preselected areas of the workpiece is used as a reference in calculating the relative mass density.
3. The method of claim 1 , wherein the removing, by the processor and for each of the plurality of preselected areas, the preselected noise component of the electron energy loss spectrum-imaging data to form the plasmon energy spectrum-imaging data comprises removing a plural scattering in the electron energy loss spectrum-imaging data for each of the respective plurality of preselected areas.
4. The method of claim 3 , wherein the removing the plural scattering in the electron energy loss spectrum-imaging data comprises performing a sub-process selected from the group consisting of a Fourier log sub-process and a Fourier ratio sub-process.
5. The method of claim 3 , wherein the removing the plural scattering in the electron energy loss spectrum-imaging data substantially eliminates a thickness effect associated with the plurality of preselected areas.
6. The method of claim 1 , wherein the generating, by the processor and for each of the plurality of preselected areas, the respective plasmon energy map based on the plasmon energy spectrum-imaging data comprises generating, for each of the plurality of preselected areas, the respective plasmon energy map based on the plasmon energy spectrum-imaging data using a non-linear least squares fitting.
7. The method of claim 1 , wherein the generating, by the processor and for each of the plurality of preselected areas, the plasmon energy map based on the respective plasmon energy spectrum-imaging data comprises generating, for each of the plurality of preselected areas, the plasmon energy map based on the respective plasmon energy spectrum-imaging data using a non-linear least squares fitting of a preselected function selected from the group consisting of a Gaussian function and a Lorentz function.
8. The method of claim 1 , wherein the calculating, by the processor, the relative mass density of the plurality of preselected areas based on the average plasmon energy value, the number of valence electrons per molecule, and the molecular weight for each of the plurality of preselected areas comprises using a Drude model equation.
9. The method of claim 8 , wherein the Drude model equation is:
Ep
=
(
28.82
eV
)
*
(
z
ρ
A
)
1
/
2
wherein Ep is the average plasmon energy value, eV is electron volts, z is the number of valence electrons per molecule, A is the molecular weight, and ρ is the relative mass density.
10. The method of claim 1 , wherein each of the plurality of preselected areas comprises an area selected from the group consisting of a sloped surface, a flat surface, and combinations thereof.
11. The method of claim 1 , further comprising modifying a manufacturing characteristic of a magnetic thin film workpiece based on the calculated relative mass density.