Solution-processed organic electronic structural element with improved electrode layer

1. A method of producing a solution-processed organic electronic structural element comprising a substrate, at least two single-layer or multilayer electrodes, between them at least one active organic semiconductive layer, comprising: depositing an n-dopant of a cesium salt in the form of a solution, thereby producing an intermediate layer or an interface between an electrode layer and an active organic semiconductive layer, wherein the intermediate layer or the interface has a thickness of less than 15 nm, wherein the cesium salt is at least one compound selected from the group of structure types consisting of:

alkane sulfonic acids:

disulfonic acids:

polymer-bound carboxylic acids:

and polymer-bound sulfonic acids

wherein R stands for alkyl (C 1 -C 20 branched, or unsaturated and/or hydroxy-substituted), phenyl (alkylated and/or hydroxy- and/or alkoxy-substituted) and/or pyridyl,

wherein R 1 stands for alkylene (C 2 -C 20 normal, branched, saturated or unsaturated and hydroxy-substituted), 1,2-phenylene, 1,3-phenylene 1,4-phenylene or 2,6-pyridylen, and

wherein n and m stand for any natural numbers.

2. The method of producing a structural element according to claim 1 , wherein the intermediate layer/the interface containing the cesium salt has a thickness in the range between 0.1 nm and 15 nm.

3. The method of producing a structural element according to claim 1 , wherein the intermediate layer/the interface containing the cesium salt has a thickness in the range between 3 nm and 5 nm.

4. The method of producing a structural element according to claim 1 , wherein the intermediate layer/the interface has a thickness of less than 10 nm.

5. The method of producing a structural element according to claim 1 , wherein the n-dopant of cesium salt is deposited in a spin coating process.

6. The method of producing a structural element according to claim 1 , further comprising, prior to depositing the n-dopant of cesium salt:

spin coating a layer of PEDOT:PSS (poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate)) on a substrate;

annealing the PEDOT:PSS layer; and

spin coating an LEP layer (light-emitting polymer) on the annealed PEDOT:PSS layer;

wherein the n-dopant of cesium salt is deposited on the LEP layer.

7. A method of producing a solution-processed organic electronic structural element comprising a substrate, at least two single-layer or multilayer electrodes, between them at least one active organic semiconductive layer, comprising:

depositing an n-dopant of a cesium salt in the form of a solution, thereby producing an intermediate layer and an interface between an electrode layer and an active organic semiconductive layer, wherein the intermediate layer and interface has a thickness of less than 15 nm, wherein the cesium salt is at least one compound selected from the group of structure types consisting of:

alkane sulfonic acids:

disulfonic acids:

polymer-bound carboxylic acids:

and polymer-bound sulfonic acids

wherein R stands for alkyl (C 1 -C 20 branched, or unsaturated and/or hydroxy-substituted), phenyl (alkylated and/or hydroxy- and/or alkoxy-substituted) and/or pyridyl,

wherein R 1 stands for alkylene (C 2 -C 20 normal, branched, saturated or unsaturated and hydroxy-substituted), 1,2-phenylene, 1,3-phenylene 1,4-phenylene or 2,6-pyridylen, and

wherein n and m stand for any natural numbers.

8. The method of producing a structural element according to claim 7 , wherein the intermediate layer and interface containing the cesium salt has a thickness in the range between 0.1 nm and 15 nm.

9. The method of producing a structural element according to claim 7 , wherein the intermediate layer/the interface containing the cesium salt has a thickness in the range between 3 nm and 5 nm.

10. The method of producing a structural element according to claim 9 , wherein the intermediate layer/the interface has a thickness of less than 10 nm.

11. The method of producing a structural element according to claim 7 , wherein the n-dopant of cesium salt is deposited in a spin coating process.