Electrostrictive resonance suppression for tunable capacitors
View Patent ↗A multi-layered capacitor includes three or more capacitor layers. A first layer includes a first DC-biased, tunable capacitor. A second layer, acoustically coupled to the first layer, includes a second DC-biased, tunable capacitor. A third layer, acoustically coupled to the second layer, includes a third DC-biased, tunable capacitor. Each dielectric of the first, second, and third capacitors has a resonance of about the same frequency, within 5%, and inner electrodes of the first, second, and third capacitors have a resonance of about the same frequency, within 5%. The resonance of each layer is a function of at least thickness, density, and material. The first, second, and third layers are biased to generate destructive acoustic interference, and the multi-layer capacitor is operable at frequencies greater than 0.1 GHz.
1. A mobile device for providing wireless communications, the mobile device comprising:
one or more electronic radio frequency components; and
a multi-layer capacitor in communication with the one or more radio frequency components, wherein the multi-layer capacitor comprises:
a first layer comprising a first tunable capacitor that is positively DC-biased;
a second layer that is acoustically coupled to and positioned over the first layer, wherein the second layer comprises a second tunable capacitor that is negatively DC-biased, wherein the first and second tunable capacitors share a first common electrode;
a third layer that is acoustically coupled to and positioned over the second layer, wherein the third layer comprises a third tunable capacitor that is positively DC-biased, wherein the second and third tunable capacitors share a second common electrode,
wherein the first, second and third tunable capacitors are biased to generate destructive acoustic interference,
wherein each dielectric of the first, second and third tunable capacitors has a resonance frequency within 5% of each other,
wherein each of the first and second common electrodes have a resonance frequency within 5% of each other,
wherein a total number of positively DC-biased dielectric layers of the multi-layer capacitor is not equal to a total number of negatively DC-biased dielectric layers of the multi-layer capacitor, and
wherein a bottom electrode of the first tunable capacitor is unbiased.
2. The mobile device of claim 1 , wherein the multi-layer capacitor is a thin-film capacitor having a mesa capacitor structure, wherein the resonance frequency of each of the first, second and third layers is a function of at least one of thickness, density or material, and wherein the multi-layer capacitor is operable at frequencies greater than 0.1 GHz.
3. The mobile device of claim 1 , wherein each of the first, second and third layers has a thickness within 20% of each other, and wherein each of the first, second and third layers has a density within 5% of each other.
4. The mobile device of claim 3 , wherein at least one of the first, second or third layers is of a different material from the other of the first, second and third layers.
5. The mobile device of claim 3 , wherein at least one of the first, second or third layers has a different thickness and a different density from the other of the first, second and third layers.
6. The mobile device of claim 1 , wherein the multi-layer capacitor further comprises two or more additional layers that each comprise an additional tunable capacitor, wherein all layers of the multi-layer capacitor are alternately DC-biased with positive and negative DC bias, and wherein a total number of tunable capacitors of the multi-layer capacitor is odd.
7. The mobile device of claim 1 , wherein the first, second and third layers comprise a dielectric formed from a high-K pyrochlore or perovskite material.
8. The mobile device of claim 7 , wherein the dielectric comprises barium strontium titanium oxide.
9. The mobile device of claim 1 , wherein the bottom electrode of the first tunable capacitor is formed directly on an insulating layer having a surface roughness of less than or equal to 0.08 micrometers.
10. The mobile device of claim 1 , wherein the multi-layer tunable capacitor has a substantially linear capacitance within a frequency range of 0.1 to 40 GHz.
11. The mobile device of claim 1 , wherein the one or more electronic radio frequency components include a receiver and a power amplifier, and wherein the multi-layer capacitor is positioned in a matching network.
12. A mobile device for providing wireless communications, the mobile device comprising:
one or more electronic radio frequency components; and
a multi-layer capacitor in communication with the one or more radio frequency components, wherein the multi-layer capacitor comprises:
a plurality of dielectric layers forming tunable capacitors that are positioned over each other and that are alternately DC-biased with positive and negative DC bias, wherein a total number of the tunable capacitors is odd, wherein pairs of the plurality of dielectric layers share a common electrode and are acoustically coupled, wherein the tunable capacitors are DC-biased to generate destructive acoustic interference, and wherein a bottom electrode of a bottom tunable capacitor of the tunable capacitors is unbiased.
13. The mobile device of claim 12 , wherein the multi-layer tunable capacitor has a substantially linear capacitance within a frequency range of 0.1 to 40 GHz.
14. The mobile device of claim 12 , wherein the bottom electrode of the bottom capacitor is formed directly on an insulating layer having a surface roughness of less than or equal to 0.08 micrometers.
15. The mobile device of claim 12 , wherein the one or more electronic radio frequency components include a receiver and a power amplifier, and wherein the multi-layer capacitor is positioned in a matching network.
16. The mobile device of claim 12 , wherein each of the plurality of dielectric layers has a resonance frequency within 5% of each other.
17. The mobile device of claim 12 , wherein each of the common electrodes has a resonance frequency within 5% of each other.
18. The mobile device of claim 12 , wherein the multi-layer capacitor has a Q factor of 20 or greater at an entire range of frequencies from 1.5 to 40 GHz.
19. A method comprising: providing wireless communications from a mobile device utilizing one or more electronic radio frequency components and a multi-layer capacitor; providing a positive DC bias to a first dielectric layer of the multi-layer capacitor that forms a first tunable capacitor; providing a negative DC bias to a second dielectric layer of the multi-layer capacitor, wherein the second dielectric layer forms a second tunable capacitor acoustically coupled to and positioned over the first tunable capacitor, wherein the first and second tunable capacitors share a first common electrode; and providing a positive DC bias to a third dielectric layer of the multi-layer capacitor, wherein the third dielectric layer forms a third tunable capacitor acoustically coupled to and positioned over the second tunable capacitor, wherein the second and third tunable capacitors share a second common electrode, wherein the providing of the positive and negative DC bias generates destructive acoustic interference between the first, second and third dielectric layers, wherein a total number of positively DC-biased dielectric layers of the multi-layer capacitor is not equal to a total number of negatively DC-biased dielectric layers of the multi-layer capacitor; and wherein a bottom electrode of the first tunable capacitor is unbiased.
20. The method of claim 19 , comprising: limiting operation of the multi-layer capacitor to frequencies between 0.1 GHz to 40 GHz, wherein each dielectric of the first, second, and third tunable capacitors has a resonance frequency within 5% of each other, wherein each of the first and second common electrodes have a resonance frequency within 5% of each other, wherein a bottom electrode of the first tunable capacitor is formed directly on an insulating layer between a substrate and the bottom electrode, and wherein the insulating layer has a surface roughness of less than or equal to 0.08 micrometers.